Strain modulated transient photostriction in La and Nb codoped multiferroic BiFeO3 thin films

Jin, Zuanming; Xu, Ya‐Qiong; Zhang, Zhengbing; Lin, Xian; Ma, Guohong; Cheng, Zhenxiang; Wang, Xiaolin

doi:10.1063/1.4770309

Cited by 28 publications

(23 citation statements)

References 37 publications

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“…5c. We attributed the strong optical absorption-dependent photoresistance response of SRO to the illumination-induced excitation of electrons, consistent with previous observations of CoFe films deposited on BFO58. This finding implies that optical absorption is an important factor in determining the photoresistance of SRO.…”

Section: Resultssupporting

confidence: 91%

Photostriction of strontium ruthenate

et al. 2017

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Transition metal oxides with a perovskite crystal structure exhibit a variety of physical properties associated with the lattice. Among these materials, strontium ruthenate (SrRuO3) displays unusually strong coupling of charge, spin and lattice degrees of freedom that can give rise to the photostriction, that is, changes in the dimensions of material due to the absorption of light. In this study, we observe a photon-induced strain as high as 1.12% in single domain SrRuO3, which we attribute to a nonequilibrium of phonons that are a result of the strong interaction between the crystalline lattice and electrons excited by light. In addition, these light-induced changes in the SrRuO3 lattice affect its electrical resistance. The observation of both photostriction and photoresistance in SrRuO3 suggests the possibility of utilizing the mechanical and optical functionalities of the material for next-generation optoelectronics, such as remote switches, light-controlled elastic micromotors, microactuators and other optomechanical systems.

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Section: Resultssupporting

confidence: 91%

Photostriction of strontium ruthenate

et al. 2017

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“…The photostriction response time increases with sample thickness due to a reduced penetration depth, being a few seconds on bulk samples [5]. On the other hand, ferroelectric films show photostriction within a few picoseconds [11][12][13][14][15], and even when the photoexcited electron-hole pair is localized [16,17].The growing interest on the interactions of light with 2D materials [18-21] makes a study of illumination leading to non-trivial structural deformations an interesting and timely endeavor. As long as a photoexcited state induces some amount of charge redistribution -which is a quite reasonable physical assumption-any material is expected to change shape as the structure is let to relieve the stress induced by the photoexcited carriers.…”

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confidence: 99%

Photostrictive Two-Dimensional Materials in the Monochalcogenide Family

et al. 2017

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Photostriction is predicted for SnS and SnSe monolayers, two-dimensional ferroelectrics with rectangular unit cells (the lattice vector a1 is larger than a2) and an intrinsic dipole moment parallel to a1. Photostriction in these two-dimensional materials is found to be related to the structural change induced by a screened electric polarization in the photoexcited electronic state (i.e., a converse piezoelectric effect) that leads to a compression of a1 and a comparatively smaller increase of a2 for a reduced unit cell area. The structural change documented here is ten times larger than that observed in BiFeO3, making monochalcogenide monolayers an ultimate platform for this effect. This structural modification should be observable under experimentally feasible densities of photexcited carriers on samples that have been grown already, having a potential usefulness for light-induced, remote mechano-opto-electronic applications.A truly novel opto-mechanical coupling in twodimensional (2D) ferroelectric materials awaits to be discovered.Photostriction -the creation of nonthermal strain upon illumination [1-4]-has been welldocumented in three-dimensional ferroelectrics such as SbSI [5] and BiFeO 3 [6,7]. It has been suggested to be driven by the large voltage build-up caused by a photovoltaic effect and the resulting converse piezoelectricity [8], and it may be useful for applications such as remotely-switchable memory devices [9] and lightinduced actuators [10]. The earliest studied photostrictive material, SbSI, transitions from a ferroelectric onto a paraelectric at a critical temperature T c < 300 K. As photostrictive effects are larger in the ferroelectric phase, T c can be increased above 300 K on SbSI ceramics which have smaller domain sizes and display a non-uniform stoichiometry nevertheless. The photostriction response time increases with sample thickness due to a reduced penetration depth, being a few seconds on bulk samples [5]. On the other hand, ferroelectric films show photostriction within a few picoseconds [11][12][13][14][15], and even when the photoexcited electron-hole pair is localized [16,17].The growing interest on the interactions of light with 2D materials [18-21] makes a study of illumination leading to non-trivial structural deformations an interesting and timely endeavor. As long as a photoexcited state induces some amount of charge redistribution -which is a quite reasonable physical assumption-any material is expected to change shape as the structure is let to relieve the stress induced by the photoexcited carriers. Here, the surprising result is the rather large magnitude of such structural change for 2D ferroelectrics, that originates from an inverse piezoelectric effect upon illumination.Two-dimensional ferroelectrics in the group IV monochalcogenide family (GeS, GeSe, SnS, SnSe, among others) [22][23][24][25][26][27][28][29][30][31] undergo a ferroelectric-to-paraelectric transition with a transition temperature that is tunable by atomic number [25]. Following the numerical approach...

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“…1(a)]. The ultrafast photostriction in BFO films [50][51][52] and ceramics [53] combined with the possibility of ultrafast gating [54], provides a perspective for light-controlled magnetic switching devices and magnetoresistive memories on sub-ns time scales. Furthermore, the fact that photostriction can exist in a number of different materials [32,55] expands the horizon of photo-magneto-elastic interactions beyond inorganic compounds [56].…”

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confidence: 99%

Optical Writing of Magnetic Properties by Remanent Photostriction

et al. 2016

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We present an optically induced remanent photostriction in BiFeO 3 , resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO 3 =Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO 3 . Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

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Strain modulated transient photostriction in La and Nb codoped multiferroic BiFeO3 thin films

Cited by 28 publications

References 37 publications

Photostriction of strontium ruthenate

Photostriction of strontium ruthenate

Photostrictive Two-Dimensional Materials in the Monochalcogenide Family

Optical Writing of Magnetic Properties by Remanent Photostriction

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