Influence of kinetic energy and substrate temperature on thin film growth in pulsed laser deposition

Synthesis and high temperature XRD studies of tantalum nitride thin films prepared by reactive pulsed dc magnetron sputtering

“…At flow rate of 25 sccm, the film surface has lesser number of grains because of the film amorphous nature and this result is in accordance with the XRD pattern. Substrate temperature is considered as an important factor in deciding the shape and size of the crystallites of thin films [24]. At the low temperature of 303 K (Fig.…”

Activation energy of surface diffusion and terrace width dynamics during the growth of In(4×3) on Si(100)-(2×1) by femtosecond pulsed laser deposition

“…According to a Monte Carlo simulation of PLD, the incident particles' kinetic energies can play a similar role in film growth as the increase in substrate temperature. 34 The influence of the former on the activation energy is complex due to the interaction between the incident particles and the surface atoms. 34 Femtosecond PLD is known to result in the formation of a plume containing energetic species.…”

“…34 The influence of the former on the activation energy is complex due to the interaction between the incident particles and the surface atoms. 34 Femtosecond PLD is known to result in the formation of a plume containing energetic species. 35 The growth of In on Si͑100͒-͑2 ϫ 1͒ by femtosecond PLD at room temperature showed the formation of the initial In͑2 ϫ 1͒ layer instead of an In͑2 ϫ 2͒ layer, as in MBE growth.…”

A new model for studying the plasma plume expansion property during nanosecond pulsed laser deposition

“…Our research group has also made some progress in this area [15,16]. In this paper, we consider the energy absorption for the target from laser radiation and partial ionization of the plasma as a dynamic source, which accelerates expansion of the laser ablated material occurring near the solid surface.…”