Activation energy of surface diffusion and terrace width dynamics during the growth of In(4×3) on Si(100)-(2×1) by femtosecond pulsed laser deposition

Abstract

Activation energy of surface diffusion and terrace width dynamics during the growth of in (4×3) on Si (100)-(2×1) by femtosecond pulsed laser deposition.

Sintering aid (ZnO) effect on proton transport in BaCe0.35Zr0.5Y0.15O3‐δ and electrode phenomena studied by distribution function of relaxation times

“…Thus, out of two rate determining processes suggested by Akoshima et al, the surface diffusion of H ad near triple phase boundary (TPB) could be predominant below 600°C . The activation energy ( E τ ) obtained from the Arrhenius plot of log τ P4 vs 1/T (Figure A) can be considered as the energy associated with the surface diffusion of H ad, which is found to be 2 eV in case of Pt|BCZYZnO|Pt . At the temperatures above 600°C both the surface processes might be contributing to the peak (P4).…”