Controllable growth of nanocomposite films with metal nanocrystals sandwiched between dielectric superlattices

Ge, Fangfang; Wang, Xuemin; Li, Yunong; Cao, Linhong; Zhang, Hongliang; Wang, Hongbin; Wu, Weidong

doi:10.1007/s11051-011-0475-z

Cited by 4 publications

(6 citation statements)

References 18 publications

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“…The growth processes of BTO/STO superlattices with embedded Ni NCs (Ni-BTO/STO) have been reported by Ge et al [15]. In the present work, the Ni-BTO/STO composite film was fabricated by L-MBE.…”

Section: Introductionmentioning

confidence: 63%

“…˛ (0.5 • ) represents the angle of incidence, d 0 (3.905Å) and d n represent the interplanar distance of the STO substrate before and after the deposition, Â 0 and Â n represent the diffraction angle of the STO substrate before and after the deposition, respectively. The surface-lattice parameter, which is proportional to the inverse of the distance between the different diffraction spots or streaks, can be directly measured from the RHEED patterns [14,16]. By measuring the diffraction streak spacing of STO shown in the insets (e), (f) and (g), the lattice constant (d n ) in cubic structure was confirmed in real space.…”

Section: Resultsmentioning

confidence: 90%

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Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

Xiong

Sun

Wang³

et al. 2012

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 90%

Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

Xiong

Sun

Wang³

et al. 2012

Journal of Alloys and Compounds

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“…1b. For these systems, the gap between the n Ni QDA is less than 10 nm, 5,6 which indicates that electrons are very lacking in the blue area of Fig. 1b and that the Ni QDAs are surrounded by a depletion area.…”

Section: Model Designmentioning

confidence: 97%

“…where α = (2mE/ħ 2 ) 1/2 , E is the subband energy; m = ħ 2 /(∂ 2 E/∂k 2 ) is the effective electron mass of Ni, 21 wave vector k = πn/d (n = 1, 2, 3, …), and d is period of the superlattice (≈16 nm). 5,6 Taking into account their derivatives and simplifying at the successive boundaries of the superlattice potential, the subband widths and spaces can be deduced. The calculated results are shown in Fig.…”

Section: Model Designmentioning

confidence: 99%

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Room-temperature resonant quantum tunneling transport of macroscopic systems

et al. 2014

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A self-assembled quantum dots array (QDA) is a low dimensional electron system applied to various quantum devices. This QDA, if embedded in a single crystal matrix, could be advantageous for quantum information science and technology. However, the quantum tunneling effect has been difficult to observe around room temperature thus far, because it occurs in a microcosmic and low temperature condition. Herein, we show a designed a quasi-periodic Ni QDA embedded in a single crystal BaTiO3 matrix and demonstrate novel quantum resonant tunneling transport properties around room-temperature according to theoretical calculation and experiments. The quantum tunneling process could be effectively modulated by changing the Ni QDA concentration. The major reason was that an applied weak electric field (∼10(2) V cm(-1)) could be enhanced by three orders of magnitude (∼10(5) V cm(-1)) between the Ni QDA because of the higher permittivity of BaTiO3 and the 'hot spots' of the Ni QDA. Compared with the pure BaTiO3 films, the samples with embedded Ni QDA displayed a stepped conductivity and temperature (σ-T curves) construction.

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Development of in situ characterization techniques in molecular beam epitaxy

Shen,

Zhan,

et al. 2024

J. Semicond.

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Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

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Controllable growth of nanocomposite films with metal nanocrystals sandwiched between dielectric superlattices

Cited by 4 publications

References 18 publications

Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

Room-temperature resonant quantum tunneling transport of macroscopic systems

Development of in situ characterization techniques in molecular beam epitaxy

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