Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (<i>ta</i>-C) films

Chhowalla, Manish; Robertson, John; Chen, C. W.; Silva, S. Ravi P.; Davis, C. A.; Amaratunga, G.A.J.; Milne, W. I.

doi:10.1063/1.364000

Cited by 352 publications

(151 citation statements)

References 45 publications

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“…Diamond-like carbon (DLC) material with a high sp 3 content is frequently deposited by ion-assisted deposition techniques, such as filtered cathodic vacuum arc (FCVA) [62]. In these cases, the sp 3 content is highly dependent on the energy of the carbon species arriving at the growth surface, with the highest sp 3 content achieved for ion energies of $100 eV [63]. This is explained by a subplantation model [61].…”

Section: Hitus Filmsmentioning

confidence: 99%

High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films

Bayer

Hofmann

et al. 2013

Physica Status Solidi (b)

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Hafnium oxide (HfO x ) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfO x while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfO x thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfO x thin films have been deposited at a rate of $1.6 nm min À1 at room temperature, with a resistivity of 10 13 V cm, a breakdown strength of 3.5 MV cm À1 and a dielectric constant of $18.2. By comparison, using the HiTUS process, amorphous HfO x (x ¼ 2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of $25 nm min À1 with a high resistivity of 10 14 V cm, a breakdown strength of 3 MV cm À1 and a high dielectric constant of $30. Two key conditions must be satisfied in the HiTUS system for high-k HfO x to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubiclike short range order. This HfO x is very attractive as a dielectric material for large-area electronic applications on flexible substrates.

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Section: Hitus Filmsmentioning

confidence: 99%

High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films

Bayer

Hofmann

et al. 2013

Physica Status Solidi (b)

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“…This field is huge, and the reader is referred to the many reviews and research papers, e.g. [4,64,65]. Here, only the example of carbon-carbon nanolayered structures should be mentioned.…”

Section: Graded Layers Ultrathin Films Multilayers Nanolaminatesmentioning

confidence: 99%

Metal plasmas for the fabrication of nanostructures

Anders¹

2007

J. Phys. D: Appl. Phys.

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A review is provided covering metal plasma production, the energetic condensation of metal plasmas, and the formation of nanostructures using such plasmas. Plasma production techniques include pulsed laser ablation, filtered cathodic arcs, and various forms of ionized physical vapor deposition, namely magnetron sputtering with ionization of sputtered atoms in radio frequency discharges, self-sputtering, and high power impulse magnetron sputtering. The discussion of energetic condensation focuses on the control of kinetic energy by biasing and also includes considerations of the potential energy and the processes occurring at subplantation and implantation. In the final section on nanostructures, two different approaches are discussed. In the top-down approach, the primary nanostructures are lithographically produced and metal plasma is used to coat or fill trenches and vias. Additionally, multilayers with nanosize periods (nanolaminates) can be produced. In the bottom-up approach, thermodynamic forces are used to fabricate nanocomposites and nanoporous materials by decomposition and dealloying.

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“…The physical attributes and thus the performance of amorphous carbon (a-C) thin films in technological applications are largely determined by their bonding configuration (i.e., sp 3 -tosp 2 bond ratio), as well as on the amount of hydrogen in the films [1][2][3][4][5][6][7]. Bonding configuration and hydrogen content can be, in turn, tailored by controlling the energy and flux of the depositing species [5,6].…”

Section: Introductionmentioning

confidence: 99%

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

Aijaz¹,

Sarakinos²,

Raza³

et al. 2014

Diamond and Related Materials

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Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films, Diamond and related materials, 2014. 44, pp.117-122. http AbstractIn the present study we contribute to the understanding that is required for designing sputtering-based routes for high rate synthesis of hard and dense hydrogenated amorphous carbon (a-C:H) films. We compile and implement a strategy for synthesis of a-C:H thin films that entails coupling a hydrocarbon gas (acetylene) with high density discharges generated by the superposition of high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS). Appropriate control of discharge density (by tuning HiPIMS/DCMS power ratio), gas phase composition and energy of the ionized depositing species leads to a route capable of providing ten-fold increase in the deposition rate of a-C film growth compared to HiPIMS Ar discharge (Aijaz et al. Diamond and Related Materials 23 (2012) 1). This is achieved without significant incorporation of H (< 10 %) and with relatively high hardness (> 25 GPa) and mass density (~2.32 g/cm 3 ). Using our experimental data together with Monte-Carlo computer simulations and data from the literature we suggest that: (i) dissociative reactions triggered by the interactions of energetic discharge electrons with hydrocarbon gas molecules is an important additional (to the sputtering cathode) source of film forming species and (ii) film microstructure and film hydrogen content are primarily controlled by interactions of energetic plasma species with surface and sub-surface layers of the growing film.

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Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

Cited by 352 publications

References 45 publications

High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films

High‐density remote plasma sputtering of high‐dielectric‐constant amorphous hafnium oxide films

Metal plasmas for the fabrication of nanostructures

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

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