Influence of ion bombardment on the properties and microstructure of unbalanced magnetron deposited niobium coatings

Savisalo, T.; Lewis, D.B.; Hovsepian, P.Eh.; Münz, W.‐D.

doi:10.1016/j.tsf.2003.12.150

Cited by 15 publications

(10 citation statements)

References 16 publications

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“…At these energies, defect formation upon ion-surface interaction can be expected, see for example Ref. 32, where an increased defect density is shown as the substrate bias potential is increased from −75 to −150 V. It is well known that defects can serve as nucleation sites for grain growth. (33) Therefore, small sized grains may be expected for the films deposited.…”

Section: Film Microstructurementioning

confidence: 97%

Effect of Ion Energy on Structure and Composition of Cathodic Arc Deposited Alumina Thin Films

Rosén

Mráz

Kreißig

et al. 2005

Plasma Chem Plasma Process

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The effect of energy supplied to the growing alumina film on the composition and structure has been investigated by varying substrate temperature and substrate bias potential. The constitution and composition were studied by X-ray diffraction and elastic recoil detection analysis, respectively. Increasing the substrate bias potential from −50 to −100 V caused the amorphous or weakly crystalline films to evolve into stoichiometric, crystalline films with a mixture of the α-and γ -phase above 700 o C, and γ -phase dominated films at temperatures as low as 200 o C. All films had a grain size of <10 nm. The combined constitution and grain size data is consistent with previous work stating that γ -alumina is thermodynamically stable at grain sizes <12 nm [McHale et al., Science 277, 788 (1997)]. In order to correlate phase formation with synthesis conditions, the plasma chemistry and ion energy distributions were measured at synthesis conditions. These results indicate that for a substrate bias potential of −50 V, ion energies in excess of 100 eV are attained, both from a high energy tail and the accelerated ions with charge >1. These results are of importance for an increased understanding of the evolution of film composition and microstructure, also providing a pathway to γ -alumina growth at temperatures as low as 200 o C.

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Section: Film Microstructurementioning

confidence: 97%

Effect of Ion Energy on Structure and Composition of Cathodic Arc Deposited Alumina Thin Films

Rosén

Mráz

Kreißig

et al. 2005

Plasma Chem Plasma Process

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“…Studies have shown [195] that even such thin layers can be used as effective barriers. In the case of Nb, which is chemically stable and forms a dense protective oxide, the layer on its own can improve the corrosion resistance of the steel to levels comparable to bulk Nb.…”

Section: Interface Engineering By Substrate Pretreatmentmentioning

confidence: 99%

Ionized physical vapor deposition (IPVD): A review of technology and applications

et al. 2006

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In plasma-based deposition processing, the importance of low-energy ion bombardment during thin film growth can hardly be exaggerated. Ion bombardment is an important physical tool available to materials scientists in the design of new materials and new structures. Glow discharges and in particular the magnetron sputtering discharge have the advantage that the ions of the discharge are abundantly available to the deposition process. However, the ion chemistry is usually dominated by the ions of the inert sputtering gas while ions of the sputtered material are rare. Over the past few years, various ionized sputtering techniques have appeared that can achieve a high degree of ionization of the sputtered atoms, often up to 50 % but in some cases as much as approximately 90%. This opens a complete new perspective in the engineering and design of new thin film materials. The development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed. The application of a secondary discharge, inductively coupled plasma

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“…Therefore, it can be speculated that during electrodeposition the surface energy is dominant leading to the development of a {110} texture in the Fe 3 Si layers. 18) There was only ¡-Fe solid solution phase was detected for substrate. The diffraction peak intensity of ¡-Fe was similar to that given in pdf card (ICSD, 87-0721).…”

Section: Phase Constitutionmentioning

confidence: 98%

Molten Salt Pulse Electrodeposition of Silicon on Low Silicon Steel

et al. 2013

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Low silicon steel was siliconized by pulse electrodeposition from KClNaClNaFSiO 2 molten salts and high silicon steel containing 6.5 mass% Si was prepared by followed diffusion annealing. The composition depth profile, the cross-section micrograph and the phase structure of the siliconized layer were characterized with glow discharge optical emission spectroscopy (GDOES), optical microscope (OM), scanning electron microscopy (SEM) with an X-ray energy dispersive spectrometer (EDS) and X-ray diffraction (XRD). The textures of substrate, deposited sample and high silicon steel were analyzed by the orientation distribution function (ODF). The results showed that Si was almost homogeneously distributed in the siliconized layer. The siliconized layer had a two-layer structure. The top layer composed of columnar grains and a layer with equiaxed grains close to the substrate. The phase structure of the layer was composed of Fe 3 Si with (110) preferred orientation. After diffusion annealing the undesirable £-fiber type texture {111}h110i and {111}h112i weakened, both easy magnetization direction Goss texture ({110}h001i) and cube texture {100}h001i were intensified.

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Influence of ion bombardment on the properties and microstructure of unbalanced magnetron deposited niobium coatings

Cited by 15 publications

References 16 publications

Effect of Ion Energy on Structure and Composition of Cathodic Arc Deposited Alumina Thin Films

Effect of Ion Energy on Structure and Composition of Cathodic Arc Deposited Alumina Thin Films

Ionized physical vapor deposition (IPVD): A review of technology and applications

Molten Salt Pulse Electrodeposition of Silicon on Low Silicon Steel

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