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Electric field induced ion drift processes in alkali-borosilicate glasses play a key role in the silicon-glass or metalglass compound formation in anodic bonding processes. By means of ex situ and in situ ion-beam analysis, which allows a quantitative depth profiling of different elements, the formation of anodic, alkali depleted glass layers and of oxygen enriched interface layers was investigated. Drift rates and depletion layer thicknesses were determined in dependence of the process temperature, bias, and drift time. The drift behavior of cations, including sodium, potassium, calcium, aluminum, and hydrogen, was examined. In addition, the drift of oxygen ions toward the compound interface was investigated. The absence of nonbridging oxygen in the investigated glass, verified by nuclear magnetic resonance investigations, gives rise to the conclusion that the drift behavior of oxygen ions depends mainly on the composition of the "leached" glass surface layer. The results confirm the anodic oxidation as the main mechanism responsible for the interface chemistry. The oxygen enrichment (oxidation) of the metal or silicon anode can be described by a reciprocal logarithmic equation.

Iridium oxide thin films were grown with atomic layer deposition (ALD) from Ir(acac) 3 and ozone between 165 and 200 °C. The films were successfully deposited on soda lime glass, silicon substrate with native oxide, and Al 2 O 3 adhesion layer. Saturation of the growth rate with respect to both precursors was verified and the film thickness depended linearly on the number of deposition cycles applied. The iridium oxide films had low impurity contents and good adhesion to all tested surfaces. IrO 2 film deposited at 185 °C had homogeneous depth profile and contained 3.5 at % hydrogen and less than 0.5 at % carbon impurities. Resistivities of about 40 nm thick IrO 2 films varied between 170 and 200 µΩ cm. The films deposited above 200 °C were metallic iridium. All the films deposited were crystalline according to X-ray diffraction patterns.