Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001)

Osten, H. J.; Griesche, J.; Gaworzewski, P.; Bolze, K. D.

doi:10.1063/1.125702

Cited by 25 publications

(7 citation statements)

References 6 publications

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“…The resistivity of the doped films with C tot ¼1.6% was 8.3 Â 10 À 4 Ohm cm while the resistivity of the film with C tot ¼2.3% was 1.5 Â 10 À 3 Ohm cm. The increase in resistivity with increasing C concentration is also reported by Hartmann et al, and Rosseel et al [12,35] and is explained by a loss in active P and the presence of many non-substitutional C related defects that might affect the carrier transport by scattering [36].…”

Section: Influence Of Phosphorous Doping Upon the Materials Qualitymentioning

confidence: 72%

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Dhayalan

Loo

Hikavyy

et al. 2015

Journal of Crystal Growth

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Section: Influence Of Phosphorous Doping Upon the Materials Qualitymentioning

confidence: 72%

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Dhayalan

Loo

Hikavyy

et al. 2015

Journal of Crystal Growth

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“…∼ 0.5%) implies a even more severe electron mobility reduction. The high amount of interstitial C atoms, which have been shown by Osten et al [44] to significantly impact upon the mobility, seems to be responsible for this mobility reduction (Coulomb scattering). We have the same behaviour in our RP-CVD grown layers as in thick, doped MBE-grown ones.…”

Section: • Mobility Is Clearly Enhanced In Modulation-dopedmentioning

confidence: 89%

High C content Si/Si_1 yC_yheterostructures for n-type metal oxide semiconductor transistors

Hartmann¹,

Ernst²,

Ducroquet³

et al. 2004

Semicond. Sci. Technol.

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We have grown by reduced pressure-chemical vapour deposition Si/Si 1−y C y /Si heterostructures for electrical purposes. The incorporation of substitutional carbon atoms into Si creates a carrier confinement in the channel region of metal oxide semiconductor (MOS) transistors. Indeed, tensile-strained Si 1−y C y layers present a type II band alignment with Si, with a conduction band offset of the order of 60 meV per atomic% of substitutional carbon atoms. For small SiH 6 flows, all the incoming carbon atoms are incorporated into substitutional sites. At 550 • C, when the SiCH 6 flow increases, the substitutional carbon concentration saturates at 1.44%. Meanwhile, the total carbon concentration C T still increases, following a simple law: C T /(1 − C T ) = (0.88-0.92)(F(SiCH 6 )/(F(SiH 4 )). This is a sign that a growing number of C atoms incorporates into interstitial sites. The hydrogenated chemistry adopted does not enable us to achieve selectivity over SiO 2 -masked wafers, but does not generate any adverse loading effect. We have integrated Si/Si 1−y C y /Si stacks (which have been shown to be stable versus conventional gate oxidations and electrical activation anneals) into the channel region of ultra-short gate length (40 nm) nMOS transistors. Secondary ion mass spectrometry profiling has shown that C atoms segregate from the Si 1−y C y layer into the Si cap and the SiO 2 gate, but also that they block the diffusion paths of B coming from the anti-punch through layer towards the gate, generating very retrograde doping profiles. The addition of C leads to a slight degradation of the electron mobility which seems to be linked to the presence of C atoms into interstitial sites. Finally, we have shown that using higher silane and methylsilane mass flows enables us to obtain higher substitutional C concentrations (max: 1.98%) in our Si 1−y C y layers, with a good resulting structural quality.

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“…Furthermore, electron mobility decreases with increasing interstitial C concentration ([C] int ). 10) The formation of a strained Si:C layer with a low [C] int , which means a high ratio of substitution, is also vital for maximizing the strain effects of e-Si:C S/D technology.…”

Section: Introductionmentioning

confidence: 99%

Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor

Itokawa

Miyano

Oshima

et al. 2010

Jpn. J. Appl. Phys.

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Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal–oxide–semiconductor field-effect transistor (nMOSFETs). In this research, molecular carbon (C) ion implantation and recrystallization schemes employed to achieve strained Si:C films with a high substitutionally incorporated carbon concentration ([C]sub) and a high ratio of substitution were studied. Several recrystallization techniques including rapid-thermal-annealing (RTA)-based solid phase epitaxy (SPE), spike annealing, and nonmelt laser annealing have been used to optimize C incorporation into Si and strain application. Results of these different implantation and annealing techniques are compared and discussed. Furthermore, we proposed the first recrystallization by nonmelt laser annealing and the co-incorporation of a dopant that increases the rate of Si regrowth and has a covalent radius slightly different from that of Si. These processes markedly promoted the recrystallization of C densely incorporated in an amorphous Si layer and improved the crystallinity of strained Si:C films while maintaining a high [C]sub at a high ratio of substitution.

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Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001)

Cited by 25 publications

References 6 publications

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

High C content Si/Si_1 yC_yheterostructures for n-type metal oxide semiconductor transistors

Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor

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Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001)

Cited by 25 publications

References 6 publications

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping

High C content Si/Si1 yCyheterostructures for n-type metal oxide semiconductor transistors

Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor

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High C content Si/Si_1 yC_yheterostructures for n-type metal oxide semiconductor transistors