Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films

Yan, Yong; Li, Shasha; Yu, Zhishui; Yan, Chuanpeng; Zhang, Yong; Zhao, Yong

doi:10.1016/j.optmat.2014.10.033

Cited by 14 publications

(9 citation statements)

References 33 publications

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“…The faster photoresponse of the heterostructured In 2 Se 3 /CuInSe 2 photoconductor could be attributed to the efficient charge separation at the interface. For clear comparison, Table S1 summarizes the relevant performance parameters of other recently developed heterojunction-based photodetectors. ,,− In general, our device stands out considering the overall performances, which reveals the superiority of the In 2 Se 3 /CuInSe 2 heterojunction in the photodetection applications.…”

Section: Resultsmentioning

confidence: 87%

“…For the pattern of In 2 Se 3 , all diffraction peaks are consistent with data of the βphase In 2 Se 3 (JCPDS 35-1056). 27,28 Raman patterns of the In 2 Se 3 /CuInSe 2 heterojunction film are presented in Figure 3b. As can be seen, the Raman spectrum taken from the CuInSe 2 region shows a strong peak at 178 cm −1 and two weak peaks at 211 and 230 cm −1 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Self-Assembly of the Lateral In₂Se₃/CuInSe₂ Heterojunction for Enhanced Photodetection

Zheng

Yao

Yang

2017

ACS Appl. Mater. Interfaces

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Layered materials have been found to be promising candidates for next-generation microelectronic and optoelectronic devices due to their unique electrical and optical properties. The p-n junction is an elementary building block for microelectronics and optoelectronics devices. Herein, using the pulsed-laser deposition (PLD) method, we achieve pure InSe-based photodetectors and InSe/CuInSe-based photodetectors with a lateral p-n heterojunction. In comparison to that of the pure InSe-based photodetector, the photodetectors based on the InSe/CuInSe heterojunction exhibit a tremendous promotion of photodetection performance and obvious rectifying behavior. The photoresponsivity and external quantum efficiency of the fabricated heterojunction-based device under 532 nm light irradiation are 20.1 A/W and 4698%, respectively. These values are about 7.5 times higher than those of our fabricated pure InSe-based devices. We attribute this promotion of photodetection to the suitable band structures of InSe and CuInSe, which greatly promote the separation of photoexcited electron-hole pairs. This work suggests an effective way to form lateral p-n junctions, opening up a new scenario for designing and constructing high-performance optoelectronic devices.

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Section: Resultsmentioning

confidence: 87%

Section: ■ Results and Discussionmentioning

confidence: 99%

Self-Assembly of the Lateral In₂Se₃/CuInSe₂ Heterojunction for Enhanced Photodetection

Zheng

Yao

Yang

2017

ACS Appl. Mater. Interfaces

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“…The rather strong characteristic peak centering at 110 cm −1 can be regarded as the dominant β-In 2 Se 3 phase lattice phonon mode. 29,30 In addition, the peaks located at 175 and 208 cm −1 can be assigned to the In−Se vibrations and A 1 (LO + TO) phonon mode of β-In 2 Se 3 , respectively. 31,32 Additionally, the weak peaks at 62 and 304 cm −1 have also been detected in previous results.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Self-Assembly High-Performance UV–vis–NIR Broadband β-In₂Se₃/Si Photodetector Array for Weak Signal Detection

Zheng

Yao

Wang

et al. 2017

ACS Appl. Mater. Interfaces

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The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-InSe/Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 10 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-InSe film (20.3 nm) and the rational energy band structures of β-InSe and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.

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“…However, it is noted that the indium rich film has large defects densities, as a result, the carrier recombination process is increased and thus the device efficiency is reduced [10,11]. It has many potential technological applications such as "phase-change random access memory (PRAM)" devices, solar cells, photosensors, buffer layer material, wide energy range photo-detectors, and lithium-ion batteries [12,13].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application

Ali

Ahmed

Hussain

et al. 2020

Optik

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Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films

Cited by 14 publications

References 33 publications

Self-Assembly of the Lateral In₂Se₃/CuInSe₂ Heterojunction for Enhanced Photodetection

Self-Assembly of the Lateral In₂Se₃/CuInSe₂ Heterojunction for Enhanced Photodetection

Self-Assembly High-Performance UV–vis–NIR Broadband β-In₂Se₃/Si Photodetector Array for Weak Signal Detection

Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application

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Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films

Cited by 14 publications

References 33 publications

Self-Assembly of the Lateral In2Se3/CuInSe2 Heterojunction for Enhanced Photodetection

Self-Assembly of the Lateral In2Se3/CuInSe2 Heterojunction for Enhanced Photodetection

Self-Assembly High-Performance UV–vis–NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection

Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application

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Self-Assembly of the Lateral In₂Se₃/CuInSe₂ Heterojunction for Enhanced Photodetection

Self-Assembly of the Lateral In₂Se₃/CuInSe₂ Heterojunction for Enhanced Photodetection

Self-Assembly High-Performance UV–vis–NIR Broadband β-In₂Se₃/Si Photodetector Array for Weak Signal Detection