Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application

Ali, Nisar; Ahmed, Rashid; Hussain, Arshad; Fu, Yong Qing; Ali, Murad; Haq, Bakhtiar Ul; AlFaify, S.

doi:10.1016/j.ijleo.2020.164935

Cited by 7 publications

(3 citation statements)

References 22 publications

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“…The crystallite size (D) can be calculated for the 350 C annealed SnSe thin film (102) by using the full width at half maximum (FWHM) β in Debye Scherrer formula given by 20 as shown below:…”

Section: Resultsmentioning

confidence: 99%

Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics

Ali

Sharif

Shahzad

et al. 2021

Intl J of Energy Research

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In this study, 490 nm thin tin selenide thin films were deposited by facile coevaporation techniques using Sn and Se sources on a clean glass substrate. The thin films were annealed at moderate annealing temperature followed by characterization and analysis. The thin annealed films possess polycrystalline nature and orthorhombic structure with an average grain size of 130 nm. The band gap assessed from absorption spectra for the highly annealed sample was 1.52 eV. The resistivity and sheet resistance were measured with four-probe techniques and the sheet resistance was =1.362 Â 10 4 ohm for the highly annealed film.

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Section: Resultsmentioning

confidence: 99%

Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics

Ali

Sharif

Shahzad

et al. 2021

Intl J of Energy Research

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“…By plotting αhν on the y-axis and hν on the x-axis and using the given relation as in reference [26,27] we get the value of the band gap. Here α represent the absorption coefficient and h is the planks constant and E g is the band gap energy.…”

Section: Fig 2 Xrd Analysis Annealed At Temperature 250⁰cmentioning

confidence: 99%

The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics

Jabeen,

Ali,

Ali

et al. 2024

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In this study, Tin selenide (SnSe) was prepared via thermal evaporation from tin ingots and selenium powder followed by annealing at 250°C in an inert atmosphere of Argon gas. Two samples were used for characterization purposes, as-deposited and annealed. The structural parameters including particle size, strain, dislocation density, and number of crystallites per unit area were calculated from XRD while the optical properties including band gap were extracted from UV-visible spectroscopy. Four probe techniques were used to measure the electrical properties.

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“…The indexed composition possesses tetragonal structure along with space group 14/mmm and it contains RP structure as listed in table 1 [11]. The average crystalline size of every sample is calculated using the Debye Scherrer equation and the reflection of the 2θ value of the XRD data [11][12][13],…”

Section: Structural and Microstructural Analysesmentioning

confidence: 99%

Effect of Sr2+ on the properties of Roddlesden-Popper Structured, Ca3Ti2O7 based ceramics

Hayat,

Nouman,

Ali

et al. 2024

Preprint

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Two-dimensional (2D) perovskite-like slabs are a class of materials that are structurally identical but have one direction of reduced dimensionality, giving the material a layered or sheet-like structure. Such materials have outstanding dielectric properties in ceramics. Such ceramic compositions of (SrxCa1−x)3Ti2O7 (0.2 ≤ x ≥ 0.8) were synthesized using the solid-state technique. The phase, microstructural and microwave dielectric properties of dense sintered (SrxCa1−x)3Ti2O7 ceramics (0.2 ≤ x ≥ 0.8) were analyzed by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FT-IR) and impedance analysis. All the samples have a Tetragonal phase structure with a space group of I4/mmm formation and the crystalline size, dislocation density and lattice strain changes with respect to Sr2+ doping were observed in the XRD analysis. The Fourier Transform Infrared Spectra (FT-IR) confirmed the bonding characteristics of CaCO3, TiO2 with SrCO3. The dielectric constant (εr) increased from 6.02 to 42.5 while minimum tangent loss (tan δ) observed was 0.0015.

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Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application

Abstract: S. (2020) Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application. Optik, 220. p. 164935.

Cited by 7 publications

References 22 publications

Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics

Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics

The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics

Effect of Sr2+ on the properties of Roddlesden-Popper Structured, Ca3Ti2O7 based ceramics

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