Influence of incidence angle and distance on the structure of aluminium nitride films prepared by reactive magnetron sputtering

Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin films

“…At 50% of nitrogen flow ratio, the columnar structure was tilted to about the 1 o'clock position. The phenomenon that the tilted columnar structure is appeared is similar to the results of AlN film prepared at an incidence angle of 451 [12]. As the nitrogen flow ratio increases to 70% and 100%, the columnar patterns, titled to the 11 o'clock position, were deposited with thicknesses of 1300 and 1400 nm, respectively.…”

“…Recently, some researchers have investigated how the growth parameter has effects on the crystal orientation and optical properties of AlN layer [9][10][11][12]. Verardi et al [9] reported on the crystalline AlN thin films grown at 200-450 1C on sapphire substrates by pulsed laser deposition with ablating Al target in nitrogen reactive atmosphere.…”

“…Kar et al [11] proposed that the crystallinity of (0 0 2) orientation of the AlN film gradually increased with the increase in the deposition pressure from 2 Â 10 À 3 to 6 Â 10 À 3 mbar, but it suddenly changed to the (1 0 0) crystal orientation at 8 Â 10 À 3 mbar. You and Kim [12] investigated the effects of the incidence angle of depositing particle and the substrate to target distance on microstructure and surface roughness of AlN film. They reported that the AlN films changed into the mixed orientation with AlN (1 0 0), AlN (0 0 2), and Al (1 1 1) peaks as the substrate to target distance increased from 3 to 10 cm.…”

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

“…Although not shown here, it should be noted that other target-substrate distances such as 45 mm have also been These results, as well as the high amount of data available in the literature, showing highly textured AIN thin films at a multitude of target-substrate distance values (Chen et al 2005;Kar et al 2008;You and Kim 2007) lead us to the conclusion that this parameter by itself does not play a significant role. In other words, highly oriented AIN thin films can be obtained in a wide range of target-substrates distances going from 30 to 70 mm.…”

CHARACTERIZATION OF AlN THIN FILMS FABRICATED BY REACTIVE DC SPUTTERING: EXPERIMENTAL MEASUREMENTS AND HÜCKEL CALCULATIONS

“…Application of magnetron technique facilitates the growth of polycrystalline AlN films on large substrates at a low temperature (as low as 200 • C or even at room temperature) with the same properties like those films obtained through CVD and MBE. [19][20][21][22] In a reactive-magnetron process, molecules of a reactive gas combine with the sputtered atoms from a metal target to form a compound thin film on a substrate. Thereby, the optical, electronic and structural properties of the resulting films can be modified by the experimental deposition conditions.…”