Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin films

Cho, Shinho

doi:10.1016/j.jcrysgro.2011.01.092

Cited by 23 publications

(13 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The crystalline grain size of AlN is estimated to be about 28 nm from the formula, which is similar to the value reported in the paper [7]. But, when the power is high to 250 W, the (002) peak becomes relatively broader, which may due to the high power induced increase of defects in the film nanocrystalline structure.…”

Section: The Effects Of Deposition Parameters On Cnc-aln Filmssupporting

confidence: 86%

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

et al. 2012

View full text Add to dashboard Cite

Abstract:Columnar nanocrystalline aluminum nitride (cnc-AlN) thin films with (002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering. At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness (RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 eV, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.

show abstract

Section: The Effects Of Deposition Parameters On Cnc-aln Filmssupporting

confidence: 86%

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Effect of nitrogen/argon flow ratio on the optical properties of AlN films have been widely reported for DC and RF magnetron sputtering [5,6,13], but the same has not been studied in detail for pulsed DC magnetron sputtering. Therefore, in this study, we have deposited aluminum nitride thin films by pulsed DC reactive magnetron sputtering for a wide range of nitrogen/argon flow ratio and their effect on optical properties has been studied using the spectroscopic ellipsometry technique.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Choudhary

Mishra

Biswas

et al. 2013

ISRN Materials Science

View full text Add to dashboard Cite

Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6-8 nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0-5.48 eV and 1.58-1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film.

show abstract

“…Consulting Figure 2 it can be assumed that at this deposition atmosphere the nitrogen saturation point necessary for stoichiometric composition is reached. It is known from the literature that small changes in the atmosphere affect deposition rate, layer structure, and morphology [35]. The deposition rate values in Table B1 have an unsteady characteristic.…”

Section: Nitrogen To Argon Ratio 5%mentioning

confidence: 95%

“…It is known from the literature that small changes in the atmosphere affect deposition rate, layer structure, and morphology [35]. The deposition rate values in Table A1 have an unsteady characteristic.…”

Section: Nitrogen To Argon Ratio 5%mentioning

confidence: 96%

“…Although heater temperature and applied RF power have significant influence, which results from ANOVA, their effect on textured (002) growth is minor. Since nitrogen content in the atmosphere has a strong influence on arrival rate and incident energy of the adatoms, it affects the deposition rate significantly [34,35].…”

Section: Influence Of Process Parameters On Texturementioning

confidence: 99%

See 1 more Smart Citation

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

et al. 2018

View full text Add to dashboard Cite

This work compares the deposition of aluminum nitride by magnetron sputtering on silicon to multilayer ceramic substrates. The variation of sputter parameters in a wide range following a fractional factorial experimental design generates diverse crystallographic properties of the layers. Crystal growth, composition, and stress are distinguished because of substrate morphology and thermal conditions. The best c-axis orientation of aluminum nitride emerges on ceramic substrates at a heater temperature of 150 • C and sputter power of 400 W. Layers deposited on ceramic show stronger c-axis texture than those deposited on silicon due to higher surface temperature. The nucleation differs significantly dependent on the substrate. It is demonstrated that a ceramic substrate material with an adapted coefficient of thermal expansion to aluminum nitride allows reducing the layer stress considerably, independent on process temperature. Layers sputtered on silicon partly peeled off, while they adhere well on ceramic without crack formation. Direct deposition on ceramic enables thus the development of optimized layers, avoiding restrictions by stress compensating needs affecting functional properties.

show abstract

Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin films

Cited by 23 publications

References 16 publications

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

Contact Info

Product

Resources

About