Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers

Compositional mapping of semiconductor quantum dots and rings

“…Strain and interdiffusion within the rings were determined with GID experiments. A marked difference was found between radial scans recorded close to the (220) and (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) Bragg reflections. Based on the symmetry of the ring shape and on FEM simulations, this asymmetry in the scans was attributed to different In contents in the rims of the QR in the two ⟨110⟩ directions.…”

“…It was soon realized that intermixing and alloying allow for a partial strain relaxation in the growing film [6][7][8][9][10]. However, the confinement properties of the islands, and so for example their photoluminescence emission wavelength [11] depend on their detailed chemical composition profile, i.e. their local stoichiometry.…”

Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy

“…Lateral size of the typical semiconductor nanoislands varies within the range of 3–80 nm; therefore, the electrons there are subjected to quantum confinement specifying, for example, photoluminescence emission [ 23 ]. But the last one may be even more seriously depends on chemical composition distribution [ 24 ]. Therefore, knowledge of the real distribution of composition in a single nanoisland is extremely important for applications.…”