Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol–gel sulfurization

Why are kesterite solar cells not 20% efficient?

“…This is depicted in fig. 1: green circles indicate observations of an additional ZnS(e) phase [3,[25][26][27][28], blue down triangles the observation of an additional SnS(e) 2 phase [27,29,30], red up triangles the observation of a Cu x S(e) phase [25,[29][30][31][32]. Basically all these observations are in agreement with the phase diagram.…”

Kësterite thin films for photovoltaics : a review

“…For processes using elemental sulfur or selenium, fast annealing (a few minutes) is possible, whereas for processes using H 2 S, which is less reactive than elemental sulfur, a long annealing time (2−3 h) is necessary for the binaries to react completely and to form large grains of CZTS [91,92]. For one-step processes, Cu-rich growth conditions are needed at the beginning of the reaction in order to foster growth of large grains [73,93], as shown in Figure 4.…”

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

“…As the zinc atomic content ratio of in ZITO matrix got to be 69% and O 2 gas partial pressure got to be over 2%, the ZITO matrix possessed amorphous and semiconducting properties that can applied in channel layer for TFTs device. The present ZITO TFTs exhibited a depletion mode operation with ® FE of 2.57 cm 2 V ¹1 s ¹1 , a small SS of 1.65 V/dec, and an average I on /I off of 10 4 . A smaller SS value and acceptable ® FE attributed to a smaller surface roughness and stable equilibrium the ZITO channel layer.…”

“…4) Particularly, the ZITO material simultaneously possesses ZnO and ITO characteristics that can be applied in many fields of optoelectronics.…”