1987
DOI: 10.1143/jpsj.56.2977
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Influence of Growth Conditions on Amorphous Germanium Films Prepared by Vacuum-Evaporation

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Cited by 5 publications
(2 citation statements)
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“…Even if all the Ge in the as-prepared sample is due to the NPs, there is only approximately 35 wt % Ge. As the sample was heated under vacuum to different temperatures, the average diameter of the particle increase and the 300 °C sample showed no electron diffraction and broad amorphous X-ray powder diffraction pattern. ,, The mean particle diameter was 5.1 ± 1.0 nm. The 450 °C sample also shows a broad diffraction pattern and a mean particle diameter of 6.0 ± 1.1 nm.…”
Section: Resultsmentioning
confidence: 97%
“…Even if all the Ge in the as-prepared sample is due to the NPs, there is only approximately 35 wt % Ge. As the sample was heated under vacuum to different temperatures, the average diameter of the particle increase and the 300 °C sample showed no electron diffraction and broad amorphous X-ray powder diffraction pattern. ,, The mean particle diameter was 5.1 ± 1.0 nm. The 450 °C sample also shows a broad diffraction pattern and a mean particle diameter of 6.0 ± 1.1 nm.…”
Section: Resultsmentioning
confidence: 97%
“…It is known that physical properties of a-Ge films depend on growth conditions. Tatsumi et al 30 show that a startling range of densities from 2.77 to 5.03 g/cm3 can be explained with two parameters: pressure in the growth chamber and deposition rate. Viscor and Allan31 report that density also depends on the type of substrate.…”
Section: Structural Investigationmentioning
confidence: 99%