Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system

Komura, Yoshiaki; Tabata, Akimori; Narita, Tomoki; Kondo, Akihiro

doi:10.1016/j.tsf.2007.06.065

Cited by 26 publications

(10 citation statements)

References 20 publications

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“…al. [19] was reported the film grown at below 1.5 Torr is contained Si nanocrystallites, where that Si nanocrystallite embedded amorphous SiC (a-SiC) film were prepared by HWCVD using CH4 as a carbon source [20] and our result at the low pressure condition below 1.5 Torr are consistent with it. On the other hand, for films prepared at 1.8 Torr, XRD peaks due to 3C-SiC(111) were observed at 35.68.…”

Section: Resultssupporting

confidence: 76%

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Astuti

Rahman

Tanikawa

et al. 2015

J. Nat. Scien. & Math. Res.

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Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H2) as carrier gas. The substrate temperature, tungsten mesh temperature, H2 flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO2/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO2/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

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Section: Resultssupporting

confidence: 76%

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Astuti

Rahman

Tanikawa

et al. 2015

J. Nat. Scien. & Math. Res.

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“…This absorption band corresponds to carbon-carbon double bonds. It shows that the RF carbon coating contains graphitic carbon-carbon bonds although the TEM image shows that it is an amorphous coating [ 52 , 53 ]. High electrical conductivity of the RF carbon coating is attributed to graphitic carbons.…”

Section: Resultsmentioning

confidence: 99%

Effects of SiC and Resorcinol–Formaldehyde (RF) Carbon Coatings on Silicon-Flake-Based Anode of Lithium Ion Battery

Tzeng

Jhan

et al. 2021

Nanomaterials

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Silicon flakes of about 100 × 1000 × 1000 nm in sizes recycled from wastes of silicon wafer manufacturing processes were coated with combined silicon carbide (SiC) and graphitic (Resorcinol–Formaldehyde (RF)) carbon coatings to serve as active materials of the anode of lithium ion battery (LIB). Thermal carbonization of silicon at 1000 °C for 5 h forms 5-nm SiC encapsulating silicon flakes. SiC provides physical strength to help silicon flakes maintain physical integrity and isolating silicon from irreversible reactions with the electrolyte. Lithium diffuses through SiC before alloying with silicon. The SiC buffer layer results in uniform alloying reactions between lithium and silicon on the surface around a silicon flake. RF carbon coatings provide enhanced electrical conductivity of SiC encapsulated silicon flakes. We characterized the coatings and anode by SEM, TEM, FTIR, XRD, cyclic voltammetry (CV), electrochemical impedance spectra (EIS), and electrical resistance measurements. Coin half-cells with combined SiC and RF carbon coatings exhibit an initial Coulombic efficiency (ICE) of 76% and retains a specific capacity of 955 mAh/g at 100th cycle and 850 mAh/g at 150th cycle of repetitive discharge and charge operation. Pre-lithiation of the anode increases the ICE to 97%. The SiC buffer layer reduces local stresses caused by non-uniform volume changes and improves the capacity retention and the cycling life.

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“…β‐SiC films have previously been prepared by chemical vapor deposition (CVD), thermal CVD (TCVD), and plasma enhanced CVD (PECVD) using CH 4 +SiH 4 , CH 4 +SiCl 4 , and methyltrichlorosilane (CH 3 SiCl 3 ) with H 2 gas. However, H 2 , CH 4 , and intermediate Si–C–H–Cl compounds are explosive, and the latter and its Cl‐containing byproducts (mainly HCl) are corrosive.…”

Section: Introductionmentioning

confidence: 99%

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

Zhang

et al. 2013

J. Am. Ceram. Soc.

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Highly oriented <111> and <110> b-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH 3 ) 3 -Si(CH 3 ) 3 ) as a precursor. The effects of laser power (P L ), total pressure (P tot ), and deposition temperature (T dep ) on the orientation, microstructure, and deposition rate (R dep ) were investigated. The orientation of the b-SiC films changed from <111> to random to <110> with increasing P L and P tot . The <111>-, randomly, and <110>-oriented b-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the <111>-and <110>-oriented films, and aligned parallel to the (111) plane in the <111>-oriented film, whereas they were perpendicular to the (110) plane in the <110>-oriented film. The highest R dep of the <111>-oriented b-SiC film was 200 lm/h at P tot = 200 Pa and T dep = 1420 K, whereas that of the <110>-oriented film was 3600 lm/h at P tot = 600 Pa and T dep = 1605 K.

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Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system

Cited by 26 publications

References 20 publications

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Effects of SiC and Resorcinol–Formaldehyde (RF) Carbon Coatings on Silicon-Flake-Based Anode of Lithium Ion Battery

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

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