Influence of frequency, temperature and composition on electrical properties of polycrystalline Co0.5CdxFe2.5−xO4 ferrites

Farea, A.M.M.; Kumar, Shalendra; Batoo, Khalid Mujasam; Yousef, Ali; Alimuddin, Alimuddin

doi:10.1016/j.physb.2007.09.080

Cited by 105 publications

(34 citation statements)

References 18 publications

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“…With increasing frequency, an increase in the imaginary part of the resistivity is observed up to a maximum value of ρ max , and then it decreases. When the temperature increases, the observed maximum moves towards a higher frequency, which confirms that relaxation effects in the tested material are activated thermally [17]. The maximum position differs slightly depending on the milling time.…”

Section: Impedance Spectroscopysupporting

confidence: 68%

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Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

2011

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Bi 5 Ti 3 FeO 15 (BTFO), an Aurivillius compound, was synthesized via sintering the Bi 2 O 3 and Fe 2 O 3 mixture and TiO 2 oxides. The precursor material was ground in a high-energy attritorial mill for (1, 3, 5, and 10) h. The orthorhombic system Bi 5 Ti 3 FeO 15 ceramics was obtained by a solid-state reaction process at 1313 K. Phase formation behavior was investigated using differential thermal analysis (DTA), thermal gravimetric (TG), and X-ray diffraction (XRD) techniques. The frequencydependent properties of the material were investigated by impedance spectroscopy. The impedance spectroscopic method is widely used to characterize electrical properties of materials and their interfaces with electronically conducting electrodes. These studies indicate that 1h, 3h, and 5h primary high-energy ball milling followed by sintering is a promising technique for pure Bi 5 Ti 3 FeO 15 ceramic preparation, whereas the ceramics obtained from the substrates after 10h milling is a two-phase material. As the result of this investigation, the model of adjusting the Nyquist charts with a three-element R-CPE (constant phase element) series connection was proposed. It was found that the value of the dielectric constant at the Curie temperature decreases when the milling time of the substrates increases. The decrease in the dielectric constant is influenced by the great dispersion of the grains, their dense packing, and location of particular grains in relation to other grains. Moreover, the change of resistivity with frequency indicates that relaxation processes take place in the material. In conclusion, J. Dercz (B)

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Section: Impedance Spectroscopysupporting

confidence: 68%

“…10. It is evident that ε and ε decrease monotonically when the frequency increases [17]. In the high-frequency region, the values of ε and ε strongly decrease and they become approximately independent of frequency.…”

Section: Dielectric Studymentioning

confidence: 88%

Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

2011

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“…Such results have been attributed to existence of temperature dependent relaxation with a spread of relaxation times in the material. The relaxation species may possibly be immobile species/electrons at low temperature and defects/vacancies at higher temperatures [16,17]. All the other investigated samples showed similar trend where the resistance decreased with heating showing semi-conducting behavior of the studied compositions.…”

Section: Ac Impedance Studiesmentioning

confidence: 60%

Synthesis and characterization of B-site doped La 0.20 Sr 0.25 Ca 0.45 TiO 3 as SOFC anode materials

Yaqub

Savaniu

Irvine

2015

International Journal of Hydrogen Energy

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“…This conductivity results from hopping conduction and increases with frequency in disordered solids [21].…”

Section: Dielectric Propertiesmentioning

confidence: 99%

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu3Ti4O12 Ceramics

Kouassi¹

2017

IJMSA

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Abstract:In this work, effect of vanadium doping of CaCu 3 Ti 4 O 12 (CCTO) on microstructure and complex dielectric constant over wide frequency (100 Hz-1 MHz) and temperature (0°C -160°C) ranges has been studied. The vanadium doping of CCTO system results in an increase of grain size, the grains being surrounded by melted-like grain boundaries. Real parts of dielectric constant of all samples are similar at low frequency (<1 kHz). In doped samples, above 1 kHz, a relaxation appears which is evidenced by a drop of real part of permittivity and a peak of its imaginary part. This relaxation phenomenon is very significant at relatively low doping rates and then decreases again as vanadium content increases. AC conductivity behavior of vanadium-doped CCTO can be divided in three regions depending on conduction processes. The calculated activation energies were close to 0.46 eV.

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Influence of frequency, temperature and composition on electrical properties of polycrystalline Co0.5CdxFe2.5−xO4 ferrites

Cited by 105 publications

References 18 publications

Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

Synthesis and characterization of B-site doped La 0.20 Sr 0.25 Ca 0.45 TiO 3 as SOFC anode materials

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics

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Influence of frequency, temperature and composition on electrical properties of polycrystalline Co0.5CdxFe2.5−xO4 ferrites

Cited by 105 publications

References 18 publications

Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

Dielectric and Structural Properties of Bi5Ti3FeO15 Ceramics Obtained by Solid-State Reaction Process from Mechanically Activated Precursors

Synthesis and characterization of B-site doped La 0.20 Sr 0.25 Ca 0.45 TiO 3 as SOFC anode materials

Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu&lt;sub&gt;3&lt;/sub&gt;Ti&lt;sub&gt;4&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; Ceramics

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Effect of Vanadium Doping on Microstructure and Dielectric Behavior of CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics