Influence of flexible substrate in low temperature polycrystalline silicon thin-film transistors: temperature dependent characteristics and low frequency noise analysis

Kim, Dong-Hyun; Kim, Jungchun; Kang, Haeyong; Shim, Jae Won; Lee, Jae Woo

doi:10.1088/1361-6528/ab98ba

Cited by 6 publications

(3 citation statements)

References 38 publications

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“…Typically, cellulose papers are fabricated by vacuum filtration, , solvent casting, ,, and partial dissolution of the fiber surface, which show a relatively high thickness due to the lack of thickness control ability. When the papers have similar properties, thinner papers are preferred that they are more applicable to smaller optoelectronic devices and have better bending stability due to the reduced bending radius causing less mechanical strain to the activation layer in flexible devices, − etc.…”

Section: Introductionmentioning

confidence: 99%

All-Cellulose Paper with High Optical Transmittance and Haze Fabricated via Electrophoretic Deposition

Kim

Hwang

Kim

et al. 2021

ACS Sustainable Chem. Eng.

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Reducing the thickness of transparent paper without losing its outstanding optical haze and transmittance remains a challenge due to their trade-off relationship. Herein, an all-cellulose transparent paper composed of cellulose nanofibril (CNF) and carboxymethyl cellulose (CMC) is developed by electrophoretic deposition (EPD) thanks to the good film-forming ability of the CMC. The thickness of the paper can be controlled in the range of 2.4−30 μm depending on the applied voltage and deposition time. The optical properties and mechanical strength are adjusted by the sonication time and the ratio between CNF and CMC, since the CNF works as a lightscattering source and mechanical reinforcement agent. Consequently, a robust all-cellulose paper with a thickness of 10 μm exhibiting high transmittance (up to 96%) and haze (up to 89%) is successfully fabricated. As our paper has competitive optical properties despite the thinner thickness than other reported all-cellulose transparent and hazy paper, we achieved the highest optical haze and transmittance values per unit thickness. We believe that this all-cellulose paper with outstanding optical properties has great potential to be applied to many fields that include flexible devices, environmentally friendly electronics, optoelectronics, and other functional devices.

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Section: Introductionmentioning

confidence: 99%

All-Cellulose Paper with High Optical Transmittance and Haze Fabricated via Electrophoretic Deposition

Kim

Hwang

Kim

et al. 2021

ACS Sustainable Chem. Eng.

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“…S ID /I D 2 at 10 Hz shows a similar trend to (g m /I D ) 2 for all device splits. This can be interpreted by the CNF+CMF model as [56][57][58] −2 trends. Thus, the CNF + CMF model is appropriate for evaluating N t .…”

Section: Methodsmentioning

confidence: 97%

“…This implies that LFN follows the correlated carrier number and mobility fluctuations (CNF + CMF) caused by carrier trapping/de-trapping near the gate oxide and IGZO channel interface. The CNF + CMF model is as follows: [56][57][58] where α is the Coulomb scattering coefficient, C OX is the capacitance of the gate oxide, and g m is the transconductance. S vfb is the flat-band voltage noise power spectral density.…”

Section: Device Characteristics Of Dual-gate A-igzo Tftsmentioning

confidence: 99%

Defect Engineering for High Performance and Extremely Reliable a‐IGZO Thin‐Film Transistor in QD‐OLED

Park

Cho

Kim

et al. 2022

Adv Elect Materials

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organic light-emitting diode (QD-OLED) product based on an oxide thin-film transistor (TFT) using an amorphous oxide semiconductor, indium-gallium-zincoxide (a-IGZO), which it will soon release. The QD-OLED has a high color gamut (BT2020 > 90%) and has excellent advantages over liquid crystal displays (LCDs) or OLEDs (BT2020, ≈75%). In the case of blue light (415-455 nm), which is harmful to eyesight, it emits only half that of existing LCDs and ≈30% that of OLEDs, emitting the lowest level among current displays. Furthermore, QD-OLEDs exhibit the best performance in all picture quality fields, such as viewing angle, reflectivity, and contrast. [6] It is important to secure the electrical stability of oxide TFTs in order to achieve high resolution, high brightness, and long life. The TFTs of the QD-OLED with the active-matrix operation basically consist of driving TFTs and switching TFTs. In the case of driving TFTs, which always supply a constant current, electrical stability is required under constant current stress (CCS) and positive bias thermal stress (PBTS). In the case of switching TFTs with a long turn-off state, it is essential to secure the stability under negative bias thermal illumination stress (NBTIS). To date, studies on the mechanism related to electrical stability have been continuously conducted on oxide TFTs using various oxide semiconductors, such as ZnO, ZnSnO, InGaZnO, InZnSnO, ZrInZnO, etc. [2,[7][8][9][10][11][12][13][14] The oxygen vacancies or oxygen interstitial model, [15][16][17][18][19][20][21] peroxide model, [22][23][24][25][26] and hydrogen complex model [27][28][29][30][31][32][33][34][35] for the oxide semiconductor itself are proposed mechanisms for electrical instability. Furthermore, the interface and near-interface defects between the oxide semiconductor and the insulating film of the upper and lower parts of the oxide TFT are also known to cause instability. First, in the case of the oxygen vacancy model, three things are known of the energy level in the electronic structure or chemical energy (spatial coordination with cation). There is an oxygen vacancy with two trapped electrons V o 0 near the valence band, a single charged oxygen vacancy with one trapped electron V o + , and a doubly charged oxygen vacancy with no trapped electron V o 2+ near the conduction band. These oxygen defects are known to cause An amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT), which exhibits the best electrical stability (PBTS ≤ 0.009 V), is implemented to create quantum-dot organic light-emitting diode product. Electrical stability has been explained through various mechanisms involving defects related to oxygen and hydrogen. The defects of a-IGZO are identified and the parameters of the deposition process are utilized to obtain V o + and V Zn − values of 1.7 × 10 17 and 2.4 × 10 18 spins cm −3 , respectively, which are quantified using electron spin resonance for the first time. The defects of the gate insulator (GI) in the upper and lower parts of the a-IGZO TFT and ...

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Recent Advances in the Development of Flexible Sensors: Mechanisms, Materials, Performance Optimization, and Applications

Qin

Wang

Chen

et al. 2022

J. Electron. Mater.

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Influence of flexible substrate in low temperature polycrystalline silicon thin-film transistors: temperature dependent characteristics and low frequency noise analysis

Cited by 6 publications

References 38 publications

All-Cellulose Paper with High Optical Transmittance and Haze Fabricated via Electrophoretic Deposition

All-Cellulose Paper with High Optical Transmittance and Haze Fabricated via Electrophoretic Deposition

Defect Engineering for High Performance and Extremely Reliable a‐IGZO Thin‐Film Transistor in QD‐OLED

Recent Advances in the Development of Flexible Sensors: Mechanisms, Materials, Performance Optimization, and Applications

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