Influence of film thickness on ferroelectric properties and leakage current density in lead-free Bi_0.5(Na_0.80K_0.20)_0.5TiO₃films

Influence of Crystallization Time on Energy-Storage Density and Efficiency of Lead-Free Bi0.5(Na0.8K0.2)0.5TiO3 Thin Films

“…All other peaks belong to a single-phase perovskite structure with no other impurity phases detected, which agrees with our recent report [25] on influence of crystallization temperature on multiferroic behaviour of BNKT films. This observation also matches our previous works [26,27] where they indicated that BNKT thin films possess simultaneously the rhombohedral and tetragonal symmetries. Among the typical orientations of the perovskite structure, the (110)/(200) peaks possess high intensity and therefore are the preferred orientations of the films.…”

Influence of Crystallization Temperature on Structural, Ferroelectric, and Ferromagnetic Properties of Lead-Free Bi0.5(Na0.8K0.2)0.5TiO3 Multiferroic Films

“…e crystalline structures of BNKT films are deduced from X-ray diffraction patterns in the 2θ ranges of 25°-75°s hown in Figure 2(a). All films are well crystallized corresponding to the single-phase perovskite structure, and no other impurity phases are detected [19,20]. BNKT films in this study possess the optimal composition near the MPB evidenced by the coexisting of rhombohedral and tetragonal phases [21].…”

“…e multilayered Bi 0.5 (Na 0.80 ,K 0.20 ) 0.5 TiO 3 (BNKT) thin films were formed on Pt/Ti/SiO 2 /Si substrates using solutions prepared by a sol-gel technique. Here, the BNKT precursor solution is derived from sodium nitrate (NaNO 3 , ≥99%, Sigma-Aldrich), potassium nitrate (KNO 3 , ≥99%, Sigma-Aldrich), bismuth nitrate (Bi(NO 3 ) 3 •5H 2 O, ≥98%, Sigma-Aldrich), and titanium isopropoxide (Ti[i-OPr] 4 , 99%, Sigma-Aldrich) [19]. Acetic acid and 2-methoxyethanol were chosen as co-solvent, and acetylacetone was chosen as ligands.…”

Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

“…Jeon et al suggests the difference between thin film and bulk behavior could be caused by large substrate clamping stresses or chemical inhomogeneity through the thickness of the film [12]. In chemical solution deposited thin films, processing conditions are known to have considerable impact on film stoichiometry, defect concentration, phase purity, stress state, and microstructure all of which can have an impact on key properties including dielectric constant, dielectric loss, ferroelectric response, and piezoelectric strain [12,13,[20][21][22][23][24][25][26]. Inverse mixing order chemical solution deposition techniques are of particular interest since they can be easily scaled into industrial applications.…”