Influence of embedded indium nanocrystals on GaAs thermoelectric properties

Warren, Michael V.; Canniff, J. C.; Chi, Hang; Morag, E.; Naab, F.; Stoica, Vladimir; Clarke, Roy; Uher, Ctirad; Goldman, R. S.

doi:10.1063/1.4816087

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…For example, embedded indium nanocrystals (NCs) have been reported to improve the number of free carriers, while increased electron and phonon scattering at boundaries suppress thermal conductivity. The carrier trapping caused a 25% increase in the Seebeck coefficient [14]. A theoretical study of the Ga 1−x In x As alloys reveals that an indium (In) addition narrows the bandgap, although the magnitude of the bandgap was sensitive to the applied Materials 2022, 15, 1781 2 of 11 exchange-correlation approximation [15].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of In Doped GaAs Alloys to Optimize Electronic, Thermoelectric and Mechanical Properties

Alhodaib

2022

Materials

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The electronic, mechanical and transport properties of the In substitution in GaAs are investigated by the TB-mBJ potential, BoltzTraP code and Charpin tensor matrix analysis using Wien2k code. The formation energies of the alloys Ga1−xInxAs (x = 0.0, 0.25, 0.50, 0.75 and 1.0) confirm that they are thermodynamically favorable. The directional symmetry changes when increasing the In concentration and reduces the bandgap from 1.55 eV (GaAs) to 0.57 eV (InAs), as well as reducing the electrical conductivity and increasing the Seebeck coefficient. The thermoelectric performance is depicted by the power factor without including lattice vibration. The elastic properties’ analysis shows mechanical stability, and elastic moduli decrease with an increasing In in GaAs, which converts the brittle nature to ductile. The Debye temperature, hardness and thermal conductivity decrease, thus, increasing their importance for device fabrications.

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Section: Introductionmentioning

confidence: 99%

Evaluation of In Doped GaAs Alloys to Optimize Electronic, Thermoelectric and Mechanical Properties

Alhodaib

2022

Materials

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Enhanced thermoelectric power factor of Bi2Sr2Co2Oy thin films by incorporating Au nanoparticles

Sun

Liang

et al. 2016

Materials & Design

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Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

Warren

Canniff

Chi

et al. 2015

Journal of Applied Physics

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We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.

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Influence of embedded indium nanocrystals on GaAs thermoelectric properties

Cited by 4 publications

References 16 publications

Evaluation of In Doped GaAs Alloys to Optimize Electronic, Thermoelectric and Mechanical Properties

Evaluation of In Doped GaAs Alloys to Optimize Electronic, Thermoelectric and Mechanical Properties

Enhanced thermoelectric power factor of Bi2Sr2Co2Oy thin films by incorporating Au nanoparticles

Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

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