Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Abstract

The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode.

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

“…Nevertheless, for resistive random access memory (RRAM) applications, using transparent AZO as a top electrode is limited. Several studies have been conducted on the influence of different metal electrodes on the characteristics of ZnO-based RRAM [2][3][4][5][6]. However, few studies have investigated the influence of oxide electrodes on the T-RRAM characteristic.…”

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

“…[4][5][6][7] RRAM technologies are of particular interest due to its high density, low cost, low power consumption, fast switching speed, and simple cell structure (ideally a cross-bar architecture). [8][9][10] RRAM based on silicon oxide (SiO x ) stands out among other RRAM because it has a unique unipolar operation mode, high on/off ratio, excellent scalability, good high temperature performance, and compatibility with standard CMOS technology. 11 Much work has been done to optimize the structure, fabrication procedure, dielectric material, and to understand the operating mechanisms of SiO x -based RRAM.…”

Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

“…So far, to understand RS mechanism, many models have been presented and studied intensively. Usually, the RS mechanisms are mainly divided into two categories, including bulk effect and interface effect [20,21]. Though in many previous reports the filament theory of bulk effect has explained many features of 0038-1101/$ -see front matter Ó 2011 Elsevier Ltd. All rights reserved.…”