Influence of dose rate on bubble formation by high energy He implantation in silicon

Oliviero, E.; Beaufort, M. F.; Barbot, J. F.

doi:10.1063/1.1385576

Cited by 21 publications

(9 citation statements)

References 28 publications

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“…In theory, combining these experiments could allow following the structural and chemical evolution of the bubbles. However, as the implantation conditions [32][33][34] and the annealing procedure [35][36][37] play a crucial role in the bubble formation and evolution, the relevance of a comparison between different experiments is seriously limited.…”

Section: Introductionmentioning

confidence: 99%

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

et al. 2018

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The evolution of nanometric helium bubbles in silicon has been investigated using spatially resolved electron energy-loss spectroscopy during in situ annealing in the transmission electron microscope. This approach allows the simultaneous determination of both the morphology and the helium density in the bubbles at each step of the annealing. Structural modification and helium emission from bubbles of various diameters in the range 7.5 to 20 nm and various aspect ratios of 1.1 to 1.9 have been studied. We clearly show that helium emission takes place at temperatures where bubble migration had hardly started. At higher temperatures, the migration (and coalescence) of voids is clearly revealed. For helium density lower than 150 He nm −3 , the Cerofolini's model taking into account the thermodynamical properties of an ultradense fluid reproduces well the helium emission from the bubbles, leading to an activation energy of 1.8 eV. When bubbles exhibit a higher initial helium density, the Cerofolini's model fails to reproduce the helium emission kinetics. We ascribe this to the fact that helium may be in the solid phase and we propose a tentative model to take into account the properties of the solid.

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Section: Introductionmentioning

confidence: 99%

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

et al. 2018

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“…The beam flux was kept in the range of ͑3-6͒ ϫ 10 12 ions cm −2 s −1 , since it was shown that changes in the implantation flux can strongly affect the accumulation of defects. 35,42 Some implantations were carried out at room temperature while others were performed at temperatures ranging from 100 up to 600°C to avoid target amorphization. Anneals were performed in a vacuum of ϳ10 −7 torr at temperatures ranging from 400 to 1100°C for 30 min in a quartz tube within a tubular furnace.…”

Section: Experimental Methodsmentioning

confidence: 99%

Damage accumulation in neon implanted silicon

Oliviero

Peripolli

Amaral

et al. 2006

Journal of Applied Physics

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Damage accumulation in neon-implanted silicon with fluences ranging from 5 ϫ 10 14 to 5 ϫ 10 16 Ne cm −2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250°C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250°C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as ͕311͖ defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

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“…Such planetarylike clusters are observed during conventional annealing for temperatures higher than 400°C. 10,22,23 These different evolutions appear only for annealing temperatures higher than a critical temperature pointing out the diffusion and H-gettering by the He-plates, so favoring its bi-dimensional growth. These observations agree with dynamical simulations as well as experiments conducted on the disk-shaped defects involving H, for which their growth is controlled by a subcritical stress-corrosion mechanism.…”

Section: Resultsmentioning

confidence: 99%

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Vallet

Barbot

Oliviero

et al. 2014

Journal of Applied Physics

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In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9 eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon.After hydrogen absorption, surface minimization of final structure occurs.2

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Influence of dose rate on bubble formation by high energy He implantation in silicon

Cited by 21 publications

References 28 publications

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope

Damage accumulation in neon implanted silicon

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

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