Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Frischbier, Mareike V.; Wardenga, Hans F.; Weidner, Mirko; Bierwagen, Oliver; Jia, Junjun; Shigesato, Yuzo; Klein, Andreas

doi:10.1016/j.tsf.2016.03.022

Cited by 44 publications

(52 citation statements)

References 55 publications

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“…The ratio between the Hall mobility and the optical mobility reflects the effect of GB scattering: a ratio of 1 implies that GB scattering plays a negligible effect in the films, whereas a ratio less than 1 implies that GB scattering influences the μ values, as explained in Section 1. When transport across GBs occurs mainly through thermionic emission instead of tunneling, the effect of GB scattering on the μ values increases with decreasing temperature . This trend is also true for scattering induced by charged extended defects .…”

Section: Resultsmentioning

confidence: 85%

“…In the spc ‐In 2 O 3 :H films, the effect of GBs was found to be minor because these films’ optical mobilities were comparable to their Hall mobilities . Furthermore, the effects of dopant species (Me and H) on the grain‐barrier height and resulting transport properties in polycrystalline films have also been discussed . With respect to intragrain properties, suppressed scattering from oxygen interstitials originating from the formation of the singly charged donor (e.g., Mo In ••• O i ″, W In ••• O i ″) and suppressed scattering from defects related to oxygen deficiencies originating from the introduction of metals with higher bond strength with O than In and Sn in the In 2 O 3 host material have been discussed.…”

Section: Introductionmentioning

confidence: 99%

“…An extended model based on scatterings produced by phonon and ionized impurities has also been discussed . Currently, the model cannot quantitatively explain the experimentally determined high μ values, especially at N values greater than 1 × 10 19 cm −3 ; however, a more in‐depth understanding of acoustic deformation potential scattering, polar optical phonon scattering, and ionized impurity scattering in these materials was achieved …”

Section: Introductionmentioning

confidence: 99%

“…[47] Furthermore, the effects of dopant species (Me and H) on the grain-barrier height and resulting transport properties in polycrystalline films have also been discussed. [53] With respect to intragrain properties, suppressed scattering from oxygen interstitials [36,39,40] originating from the formation of the singly charged donor (e.g., Mo In…”

Section: Introductionmentioning

confidence: 99%

“…[49] Currently, the model cannot quantitatively explain the experimentally determined high μ values, especially at N values greater than 1 Â 10 19 cm À3 ; however, a more in-depth understanding of acoustic deformation potential scattering, polar optical phonon scattering, and ionized impurity scattering in these materials was achieved. [49,53,57] In this study, to clarify the commonalities and disparities between the two types of In 2 O 3 films with high μ, we fabricated poly-In 2 O 3 , In 2 O 3 :W, and In 2 O 3 :Ce films in the as-deposited state and spc-In 2 O 3 :H, In 2 O 3 :W,H, and In 2 O 3 :Ce,H films and evaluated their structural, electrical, and optical properties. All of the films were deposited using an RPD system, and the deposition conditions were fixed as much as possible (except for variables such as the dopant species and concentrations, substrate temperatures, and H 2 O vapor pressures during growth) to minimize fluctuations in film properties as a consequence of changes in the experimental conditions.…”

Section: Introductionmentioning

confidence: 99%

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In₂O₃‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

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Shibata

2018

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The emerging technological demands for high‐efficiency solar cells and flexible optoelectronic devices have stimulated research on transparent conducting oxide (TCO) electrodes. High‐mobility TCOs are needed to achieve high conductivity with improved visible and near‐infrared transparency; however, the fabrication of TCO films on heat‐sensitive layers or substrates is constrained by the trade‐off between fabrication temperatures and TCO properties. Historically, Sn‐doped indium oxide and amorphous In–Zn–O have been used as standard TCOs to achieve high mobility using low fabrication temperatures. However, two polycrystalline In2O3 films with significantly higher mobilities have recently been reported: i) polycrystalline (poly‐) In2O3 films doped with metal (Ti, Zr, Mo, or W) impurities instead of Sn exhibit mobilities greater than ≈80 cm2 V−1 s−1 even when grown at low temperatures and ii) solid‐phase crystallized (spc‐) H‐doped In2O3 (In2O3:H) and In2O3:Ce,H films exhibit mobilities greater than 100 cm2 V−1 s−1 when processed at low temperatures of 150–200 °C. Here, poly‐In2O3, In2O3:W, and In2O3:Ce films and spc‐In2O3:H, In2O3:W,H, and In2O3:Ce,H films are fabricated. Comparative studies of these films reveal the effect of the i) metal dopant species; ii) metal and hydrogen codoping; and iii) solid‐phase crystallization process on the resultant transport properties.

show abstract

Section: Resultsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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In₂O₃‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

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Defect Modulation Doping

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et al. 2019

Adv Funct Materials

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The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density as well as mobility. Modulation doping, a mechanism that exploits the energy band alignment at an interface between two materials to induce free charge carriers in one of them, is shown to circumvent the mobility restriction. Due to an alignment of doping limits by intrinsic defects, however, the carrier density limit cannot be lifted using this approach. Here, a novel doping strategy using defects in a wide bandgap material to dope the surface of a second semiconductor layer of dissimilar nature is presented. It is shown that by depositing an insulator on a semiconductor material, the conductivity of the layer stack can be increased by 7 orders of magnitude, without the necessity of high-temperature processes or epitaxial growth. This approach has the potential to circumvent limits to both carrier mobility and density, opening up new possibilities in semiconductor device fabrication, particularly for the emerging field of oxide thin film electronics.

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Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

Doumit

Soro

Ozocak

et al. 2021

Advcd Theory and Sims

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While single-junction solar cells may be capable of attaining AM1.5 theoretical efficiency of 33.16%, infinite multijunction (MJ, Tandem) solar cells will have a limiting efficiency of 86.8%. Tandem solar cells based on crystalline silicon (c-Si) bottom cells are therefore attracting great interest. An interesting candidate for the top cell absorber is represented by copper zinc tin sulfide Cu 2 ZnSnS 4 (CZTS). In this work, the CZTS/Si tandem solar cell is optimized by using indium oxide / Cadmium sulfide (In 2 O 3 /CdS) hybrid buffer. This present work reports CZTS/Si solar cell with an open-circuit voltage V OC of over 0.942 V and a J SC of 34.7 mA cm − ² by adding In 2 O 3 layer in the CZTS top cell. The added In 2 O 3 layer has a thickness of 0.022 µm and is n-doped with a concentration of 1e20 cm −3 . Compared with a CZTS/Si in which the hybrid buffer is of CdS, the efficiency is increased from 13.5% to 28.4%. These hybrid In 2 O 3 /CdS buffers provide a promising way to reduce the V OC deficit and further boost the efficiency of CZTS/Si solar cells.

show abstract

Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Cited by 44 publications

References 55 publications

In₂O₃‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

In₂O₃‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

Defect Modulation Doping

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell

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Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

Cited by 44 publications

References 55 publications

In2O3‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

In2O3‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

Defect Modulation Doping

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In2O3 Layer in CZTS Top Cell

Contact Info

Product

Resources

About

In₂O₃‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

In₂O₃‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In₂O₃ Layer in CZTS Top Cell