Influence of different seed materials on multi-crystalline silicon ingot properties

Reimann, C.; Trempa, M.; Lehmann, Toni; Roßhirt, Katharina; Stenzenberger, J.; Friеdrich, J.; Hesse, K.; Dornberger, E.

doi:10.1016/j.jcrysgro.2015.10.024

Cited by 28 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the literature, chips [15] (small Si pieces) and granules [16,17] (small spherical Si beads) have been reported to be used as seeds for HP mc-Si ingot growth with promising results. However, from the work presented on the literature, we can conclude that it is essential to better understand and control the initial grain size and orientation distribution at both bottom and walls of the crucible, as well as the initial defect density to obtain the targeted dislocation density reduction higher in the ingot [18].…”

Section: Introductionmentioning

confidence: 99%

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

et al. 2016

View full text Add to dashboard Cite

a b s t r a c tThis work is dedicated to the advanced in situ X-ray imaging and complementary ex situ investigations of the growth mechanisms when silicon solidifies on a monocrystalline seed oriented 〈110〉 in the solidification direction. It aims at deepening the fundamental understanding of the phenomena that occur throughout silicon crystal growth with a particular focus on mechanisms of formation of defects detrimental for photovoltaic applications. Namely, grain nucleation, grain boundary formation and evolution, grain competition, twining occurrence, dislocation generation and interaction with structural defects are explored and analysed. Nucleation of twin crystals preferentially occurs on {111} facets at the edge of the sample where solid e liquid e vapor triple point lines exist in interaction also with the crucible as well as, at grain boundary grooves at the solid e liquid interface (solid e solid e liquid triple lines), where two grains are in competition, either on the {111} facets of the groove or in the groove. Enhanced undercooling and/or stress accumulation levels are found to act as driving forces for grain nucleation. Additionally, it is demonstrated that twin formation has the property to relax stresses stored in the crystal during the growth process. However, grains formed initially in twin position can undergo severe distortion when they are in direct competition or when they are squeezed in e between grains. Moreover, we show by X-ray Bragg diffraction imaging that on the one hand, coherent S3 〈111〉 grain boundaries efficiently block the propagation of growth dislocations during the solidification process, while on the other hand, dislocations are emitted at the level of incoherent and/or asymmetric S27a 〈110〉 at the encounter with either S3 〈111〉 or S9 〈110〉 grain boundaries. Indeed, grain boundaries that deviate from the ideal coincidence orientation act as dislocation sources that spread inside the surrounding crystals.

show abstract

Section: Introductionmentioning

confidence: 99%

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

et al. 2016

View full text Add to dashboard Cite

show abstract

“…It is believed that the uniform and small-grained structure reduces the stress concentration at the initial stage of solidification and thus the initial dislocation generation. It has also been suggested, however without clear evidence, that the presence of RAGBs can additionally relax stresses through a slip mechanism at high temperatures [6,8]. It is expected that since the global stress is reduced and that the dislocation sources are less abundant, the dislocation multiplication mechanisms are less active.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…The ingots solidified with this technique present not only a better uniformity and a higher production yield but also an improved material quality for photovoltaic applications. Since 2011, different approaches have been proposed to obtain such a grain structure [2][3][4][5][6]. As a result, the average efficiency…”

Section: Introductionmentioning

confidence: 99%

Random angle grain boundary formation and evolution dynamics during Si directional solidification

et al. 2019

View full text Add to dashboard Cite

The growth of multicrystalline silicon and the formation of a random angle grain boundary, as well as the dislocation generation and expansion is observed dynamically in situ, by Synchrotron X-ray imaging techniques. The focus is kept on a random angle grain boundary since its behavior is particularly important to better understand the HP mc-Si (High Performance Multi-crystalline Silicon) photovoltaic properties. Due to the process conditions and to the grain competition that occurs during the solidification, a facetted {111} /facetted {111} groove is formed by this random angle grain boundary at the solid/liquid interface. It is shown how the shape of the solid/liquid interface allows the change of the preferential {111} growth facet and affects the grain boundary propagation direction. In one of the groove configurations, the two adjacent {111}

show abstract

“…The main aspect was to provide foreign nucleating agents at the crucible bottom and to solidify the silicon melt directly on them to achieve the fine‐grained HPM structure. It turned out that the alternative nucleation methods developed at IISB provide good perspectives to replace the classical seeding on a silicon feedstock particle layer in order to reduce the production costs and to increase the yield of high‐quality HPM silicon wafers …”

Section: Growth Of Photovoltaic Materialsmentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

View full text Add to dashboard Cite

This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

show abstract

Influence of different seed materials on multi-crystalline silicon ingot properties

Cited by 28 publications

References 11 publications

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

In situ investigation of the structural defect generation and evolution during the directional solidification of 〈110〉 seeded growth Si

Random angle grain boundary formation and evolution dynamics during Si directional solidification

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Contact Info

Product

Resources

About