Influence of dielectric constant distribution in gate dielectrics on the degradation of electron mobility by remote Coulomb scattering in inversion layers

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

“…Prior to negative bias stress ͑V stress =0͒, we determined N tot ϳ 1.5 ϫ 10 12 / cm 2 and eff ϳ 193 cm 2 / V s. Hence, the initial charge density of N tot ϳ 1.5ϫ 10 12 / cm 2 results in only a 7% degradation from the extrapolated zero charge mobility ͑from N tot =0 = 208 cm 2 / V s͒. This relatively low level of degradation for N tot ϳ 1.5ϫ 10 12 / cm 2 is in agreement with previous theoretical modeling, 22 predicting 5%-10% degradation of the mobility for 1 -2 ϫ 10 12 / cm 2 fixed oxide charges.…”

“…5 and theoretical modeling in Ref. 22. As a result of the reduction in phonon vibration by lowering the temperature, the 1 / C percentage contribution to 1 / eff increases and reaches a maximum of ϳ15% at 50 K as shown in Fig.…”

Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics

“…Recently several experimental and theoretical studies have been performed to understand the nature and strength of the mobility degrading mechanisms in thin dielectrics (with or without high-j) on Si and Ge N-and PMOSFETs [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In particular, in the pioneering work in [1] it was shown that the remote surface roughness limited mobility decreases with decrease in the dielectric thickness (t ox ), and the technique in [1] was used in [2] to explain the experimentally observed hole mobility reduction with decrease in t ox in Al 2 O 3 on Si transistors.…”

Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer

“…Although reliable experimental results [2,3] suggest that this mobility lowering can be associated with remote Coulomb scattering (RCS) due to ionized impurities in poly-Si gate, the mechanism of RCS has not been fully understood yet. Recent calculation [4] suggested that the dependence of remote Coulomb scattering potential φ on dielectric constant ε in stacked-gate structure can have a maximum with increasing ε (Fig.1(a)).…”