“…It has been found that by varying the substrate temperature, the stress can be varied from compressive, at lower substrate temperatures, to tensile, at higher temperatures [7- temperature at which zero film stress is obtained has been found to vary from 70 "C [9] to 580 "C [7], depending on the other experimental conditions, like reactor geometry, composition of reactive gases, gas pressure, plasma frequency, etc. In general, CVD silicon nitride films contain a certain amount of hydrogen, which decreases with increasing substrate temperature [7,8, lo].…”