2017
DOI: 10.1016/j.jallcom.2017.01.114
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Influence of deposition potential on Cu2ZnSnS4 thin–film solar cells co–electrodeposited on fluorine–doped tin oxide substrates

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Cited by 21 publications
(13 citation statements)
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“…The change in the film surface may be brought about by the CZT crystal lattice deformation which is attributed to reacting with S atoms comparable to CZT single crystals during the sulfurization process. 23 The microstructures of our samples in this study were similar to those of CZTS reported by Guo et al 27 and Wang et al 28 In solar cell devices, larger grains are necessary to obtain a smaller number of grain boundaries that will decrease the carrier recombination. It was obvious that the Na ions stimulated the CZTS crystal growth.…”
Section: Resultssupporting
confidence: 85%
“…The change in the film surface may be brought about by the CZT crystal lattice deformation which is attributed to reacting with S atoms comparable to CZT single crystals during the sulfurization process. 23 The microstructures of our samples in this study were similar to those of CZTS reported by Guo et al 27 and Wang et al 28 In solar cell devices, larger grains are necessary to obtain a smaller number of grain boundaries that will decrease the carrier recombination. It was obvious that the Na ions stimulated the CZTS crystal growth.…”
Section: Resultssupporting
confidence: 85%
“…Besides, shunt conduction G could also be related to recombination in grain boundaries, cracks in the film and depletion region of CZTSSe/CdS and/or CZTSSe/FTO. [ 9,28a,30 ] Hence, the higher shunt conduction at lower annealing temperature (480 and 510 °C) could be attributed to recombination in the increased grain boundaries owing to low crystalline quality and poor morphology. Whereas the higher shunt conduction at higher annealing temperature above 540 °C attributes to recombination due to pinholes, voids, and CZTSSe/FTO back interface.…”
Section: Resultsmentioning
confidence: 99%
“…[ 2,3 ] Recently, bifacial, semi‐transparent, and tandem solar cells based on kesterite receive enormous interest. [ 4–11 ] The opaque nature of traditional molybdenum (Mo) substrate limits its application in a related area. For this purpose, alternative transparent back contacts such as In 2 O 3 :Sn (ITO), ZnO:Al (AZO), and SnO 2 :F (FTO) have been adopted.…”
Section: Introductionmentioning
confidence: 99%
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“…Some efforts have been dedicated to kesterite-based bifacial solar cells, but the efficiency is still lower compared with the conventional Mo-based solar cells [27][28][29][30][31][32][33][34][35][36][37]. The high parasitic loss was reported to be one of the reasons when using transparent conducting oxide (TCO) as a back contact [29][30][31][32][33][34][35][36], although a slightly higher efficiency of 7.9% was achieved by using a vacuum-based process combined with a complex interlayer modification of the back interface [37]. Apart from that, deposition of 10 nm Ge layer on the top of sputtered precursor film, MgF 2 anti-reflective coating, and long annealing time (over 60 min) have been applied to make the result possible.…”
Section: Introductionmentioning
confidence: 99%