Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films

Optical activation of Er3+ in Al2O3 during pulsed laser deposition

“…After annealing at temperatures P800°C the spectrum shape is different. It becomes narrower, with a FWHM of 40 nm, and shifts to longer wavelengths, as it was earlier reported [14]. The emission spectrum corresponding to the film grown at 500°C can also be seen in Fig.…”

“…The behavior of the film grown at 600°C is similar to that of the film grown at 500°C, and thus it is not included in order to keep the clarity of the figure. The evolution of the reference film is the same as that earlier reported [14]: both the PL intensity and the lifetime increase in a similar way as the annealing temperature is increased. Samples grown on heated substrates show a different behavior.…”

Erbium location into AlN films as probed by spatial resolution experimental techniques

“…Indeed, the aluminosilicate glasses composing optical fibres, need to have sources and amplifiers working at wavelengths that are compatible with the window of information transmission which costs least possible energy, that is that coincides with the low-loss area of the absorption spectrum. The fortunate infra-red emission of erbium at 1.535 lm resulting in an electronic transition between the 4 I 13/2 and the 4 I 15/2 levels, makes the rare earth compatible for such requirements and explains why many studies address the incorporation of erbium in different matrices [5][6][7][8][9].…”

The Selective Growth of Silicon Nanowires and Their Optical Activation

“…Furthermore, Aluminium oxide possesses the low thermal expansion coefficient (Jaymes et al, 1996), high chemical durability, and good mechanical property, which are benefit to Al 2 O 3 film derived from sol-gel solutions on Si wafer substrate. It is very important for the application of the optical devices (Jimenez de Castro et al, 2000;Wang et al, 2004aWang et al, , 2004bArmelao et al, 2005). In order to prevent the clustering of erbium ions in the silica network, Al ions could be added into the silicon oxide structure or completely aluminum oxide structure.…”