Influence of damage caused by Kr ions and neutrons on electrical properties of silicon detectors

Effect of gamma radiation onto the properties of TeO2thin films

“…Tolpygo et al (1996) have reported an increase in the resistivity of YBa 2 Cu 3 O 7− δ films with electron radiation. Resistivity measurements in (Croitoru et al , 1999) indicate the increase of ρ with increasing fluence Φ for neutrons and for charged particles. In contrast to (Tolpygo et al , 1996; Croitoru et al , 1999), Figure 4 shows a highly consistent close to linear decrease of the sheet resistance R s values with the increase in gamma radiation dose.…”

“…Radiation‐induced changes in material properties have been explored earlier using the Hall effect measurements (Tolpygo et al , 1996; Croitoru et al , 1999). Tolpygo et al (1996) have studied the effect of electron irradiation on critical superconducting temperature T C , resistivity and Hall coefficient of thin YBa 2 Cu 3 O 7− δ films fully loaded with oxygen.…”

“…A significant increase in both the slope of resistivity curves and the Hall coefficient have been found to occur due to irradiation. Results on Hall effect and resistivity measurements of low‐ and high‐resistivity silicon, used for fabrication of detectors, non‐irradiated and irradiated with ions (Kr) and neutrons have been presented by (Croitoru et al , 1999). The changes in the structural and the electrical properties are due to the damage caused by irradiation of silicon.…”

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

“…The small sensitivity in either the electrical or the optical properties of material to radiation or fluence (Φ) in the saturation region has been attributed to the generation of high structural disorder [6]. This damage may create a large enough concentration of localized levels, which reduces the sensitivity of parameters to further irradiation.…”

“…This damage may create a large enough concentration of localized levels, which reduces the sensitivity of parameters to further irradiation. High concentration of dangling bonds makes disordered semiconductors insensitive to doping or irradiation [6,14].…”