Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

Effect of InxGa1−xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

“…Since the strain existing in the InAs/GaAs QDs along the growth direction can be released by using an In x Ga 1Àx As SRL [24], the PL peak shifts to longer wavelengths with increasing SRL thickness due to strain relaxation [16][17][18][19]. However, the PL peak for the InAs QDs capped with an In x Ga 1Àx As SRL shifts to shorter wavelengths when the t ASRL is larger than the height of the InAs QDs.…”

“…The QD-LDs operating between 1.3 and 1.55 mm are of current interest because of their potential applications in optical communications and optical access networks; however, many problems still exist in controlling the size, homogeneity, and distribution of QDs, which significantly affect the emission wavelength and the linewidth. Even though some works concerning the manipulation of the emission wavelength between 1.3 and 1.55 mm by utilizing an In x Ga 1Àx As strain-release layer (SRL) on InAs QDs have been performed [16][17][18][19], systematic studies of the growth parameters, such as the In mole fraction and the thickness of the In x Ga 1Àx As SRL, are necessary in order to adequately control the spectral range of the QDs. This paper reports data for the effect of In x Ga 1Àx As asymmetric SRLs (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs QDs grown by using MBE method with atomic layer epitaxy (ALE) technique.…”

Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers

“…The energy separation between the ground and first excited radiative transitions is about 65 meV. To improve the performance of the QD lasers, especially the threshold current temperature stability, several researches have been carried out to enlarge this transition [1,2,13].…”

Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

“…Especially for selfassembled InAs QD system on GaAs substrate, fabricating the QD structure with well-defined electronic states, and manipulating the emission wavelength and energy-level spacing have been required for much wider applications. In order to extend the emission wavelength of InAs QDs on GaAs to 1.3 mm, which is an important region for the fiber optic communications, several research works have been carried out by modifying the QD structures using so-called strain-reducing layers like InGaAs and InAlAs with different lattice constants [5,6]. However, the temperature dependence of the optical properties of QDs with strainreducing layer has not been fully investigated yet.…”