Influence of Co2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3-based varistors

Liu, Jianke; Luo, Xingyu; Cao, Wenbin; Chen, Jiaojiao; Su, Jinfeng; Chen, Honglin; Li, Zhizhi

doi:10.1016/j.mssp.2022.107179

Cited by 8 publications

(1 citation statement)

References 25 publications

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“…This may be attributed to the fact that the substitution of Co for Zn in the ZnO lattice promotes the growth of the ZnO grain. 31 Nevertheless, the average grain size of the quaternary system is 8.48 mm, suggesting that grain growth is restricted with Sb 2 O 3 doping. According to the results of XRD, considerable Co 3+ ions may be forced to migrate to grain boundaries due to the preferential substitution of Sb 3+ and precipitate on the surface of the ZnO grain.…”

Section: Resultsmentioning

confidence: 99%

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Wang,

Xu,

Chu

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Wang,

Xu,

Chu

et al. 2024

J. Mater. Chem. C

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An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

Cheng,

Zheng,

Zeng

et al. 2024

Physica Rapid Research Ltrs

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Low working voltage‐driven ZnO‐based varistor ceramics play an important role in the multilayer chip varistors, which require a low sintering temperature of ZnO varistor for its low energy consumption. Herein, a remarkable reduction of the sintering temperature from the usual 1100–1300 °C to 950 °C is successfully achieves in the ZnO ceramics via a certain 0.05 mol% of Cr2O3 dopants. The underlying mechanism is found to be involved with the formation of basal‐plane inversion boundaries between the ZnO grains, which can promote the rapid grain growth within the ceramics. Furthermore, the ZnO varistors with 0.05 mol% Cr2O3 dopant exhibit excellent performance. A low breakdown voltage of 416 V mm−1, a high nonlinear coefficient of 39, and a low leakage current of 3.4 μA are obtained simultaneously. This work presents an effective and promising approach for the cost‐efficient preparation of high‐performance ZnO‐based varistors, which have particular significance for the application of multilayer chip varistors with low working voltage.

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Effects of SiO2 on the microstructure and electrical properties of ZnO-based varistors (ZBSCCM) prepared by two-step sintering routework

Huang,

Pan,

et al. 2023

Ceramics International

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Influence of Co2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3-based varistors

Cited by 8 publications

References 25 publications

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

Effects of SiO2 on the microstructure and electrical properties of ZnO-based varistors (ZBSCCM) prepared by two-step sintering routework

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Influence of Co2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3-based varistors

Cited by 8 publications

References 25 publications

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

An Ultralow Concentration of Cr2O3 Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

Effects of SiO2 on the microstructure and electrical properties of ZnO-based varistors (ZBSCCM) prepared by two-step sintering routework

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An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics