Effects of SiO2 on the microstructure and electrical properties of ZnO-based varistors (ZBSCCM) prepared by two-step sintering routework

Huang, Xiaolong; Pan, Guangxu; Li, Jiaqi; Zhu, Dachuan; Yan, Qun

doi:10.1016/j.ceramint.2023.09.050

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2024

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Cited by 5 publications

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“…Besides, researchers prefer to dope both Co and Sb in the matrix composition of ZnO varistor ceramics. Huang et al 39 utilized Co 2 O 3 and Sb 2 O 3 co-doping as the two matrix compositions to obtain a high α of up to 74. Li et al 40 reported the ZnO–Bi 2 O 3 –Sb 2 O 3 –Co 2 O 3 -based varistor by other oxide doping, which exhibited a low I L of 1.06 μA cm −2 .…”

Section: Introductionmentioning

confidence: 99%

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Wang,

Xu,

Chu

et al. 2024

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Wang,

Xu,

Chu

et al. 2024

J. Mater. Chem. C

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An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

Cheng,

Zheng,

Zeng

et al. 2024

Physica Rapid Research Ltrs

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Low working voltage‐driven ZnO‐based varistor ceramics play an important role in the multilayer chip varistors, which require a low sintering temperature of ZnO varistor for its low energy consumption. Herein, a remarkable reduction of the sintering temperature from the usual 1100–1300 °C to 950 °C is successfully achieves in the ZnO ceramics via a certain 0.05 mol% of Cr2O3 dopants. The underlying mechanism is found to be involved with the formation of basal‐plane inversion boundaries between the ZnO grains, which can promote the rapid grain growth within the ceramics. Furthermore, the ZnO varistors with 0.05 mol% Cr2O3 dopant exhibit excellent performance. A low breakdown voltage of 416 V mm−1, a high nonlinear coefficient of 39, and a low leakage current of 3.4 μA are obtained simultaneously. This work presents an effective and promising approach for the cost‐efficient preparation of high‐performance ZnO‐based varistors, which have particular significance for the application of multilayer chip varistors with low working voltage.

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The Effect of Sintering Temperature on the Microstructure and Electrical Properties of ZnO–Bi2O3 Varistor Ceramics

Tian,

Wu,

Tian

et al. 2024

J. Electron. Mater.

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Effects of SiO2 on the microstructure and electrical properties of ZnO-based varistors (ZBSCCM) prepared by two-step sintering routework

Cited by 5 publications

References 45 publications

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

The Effect of Sintering Temperature on the Microstructure and Electrical Properties of ZnO–Bi2O3 Varistor Ceramics

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Effects of SiO2 on the microstructure and electrical properties of ZnO-based varistors (ZBSCCM) prepared by two-step sintering routework

Cited by 5 publications

References 45 publications

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

An Ultralow Concentration of Cr2O3 Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

The Effect of Sintering Temperature on the Microstructure and Electrical Properties of ZnO–Bi2O3 Varistor Ceramics

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An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics