Influence of chemical corrosion on resistivity and 1/f noise of polysilicon gauges

Michelutti, L.; Mathieu, N.; Chovet, A.; Galerie, A.

doi:10.1016/s0026-2714(99)00215-2

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…249 Under combined harsh conditions, such as elevated temperature and corrosive atmospheres, polysilicon has been shown to degrade. Michelutti et al evaluated polysilicon resistivity and dynamic electrical noise under Ar, air, and chlorinated environments while in contact with aluminum at temperatures of 400 or 600 C for up to 24 h. 250 While resistivity only shifted by >10%, power spectral density analysis showed that there was increasing noise at frequencies less than 1000 Hz. Here again, to our knowledge, there has been no study of the degradation in E and r f under these combined harsh conditions.…”

Section: Environmentmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

100

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Silicon devices are ubiquitous in many micro- and nano-scale technological applications, most notably microelectronics and microelectromechanical systems (MEMS). Despite their widespread usage, however, issues related to uncertain mechanical reliability remain a major factor inhibiting the further advancement of device commercialization. In particular, reliability issues related to the fracture of MEMS components have become increasingly important given continued reductions in critical feature sizes coupled with recent escalations in both MEMS device actuation forces and harsh usage conditions. In this review, the fracture strength of micro- and nano-scale silicon components in the context of MEMS is considered. An overview of the crystal structure and elastic and fracture properties of both single-crystal silicon (SCS) and polycrystalline silicon (polysilicon) is presented. Experimental methods for the deposition of SCS and polysilicon films, fabrication of fracture-strength test components, and analysis of strength data are also summarized. SCS and polysilicon fracture strength results as a function of processing conditions, component size and geometry, and test temperature, environment, and loading rate are then surveyed and analyzed to form overarching processing-structure-property-performance relationships. Future studies are suggested to advance our current view of these relationships and their impacts on the manufacturing yield, device performance, and operational reliability of micro- and nano-scale silicon devices.

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Section: Environmentmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

100

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“…Finally, this particular test structure led to a resistance value around 3 k corresponding to 400 polysilicon squares. Four point measurements on AlTi and TiW layers gave sheet resistivity values of 8 10 -6 cm and 50 cm respectively that are in good agreement with the literature [4]. The more precise measurements on the double layered metal lines of the test structures (200 nm AlTi on 100 nm TiW) indicated a square resistance of 0.332 with a temperature coefficient of 1.74 10 -3 .…”

Section: Sample Preparationsupporting

confidence: 85%

“…The other samples show resistivity variations inferior to 2 10 -3 . Polysilicon resistivity drifts during thermal aging grater than 1% have been already reported in other reliability studies [4,5]. Carvou et al used the same aging temperature (150°C) but in their study test structures were also maintained under constant voltage.…”

Section: Physical Parameter Extractionmentioning

confidence: 82%

Reliability study of AlTi / TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications

Andrei

Malhaire

Brida³

et al.

Proceedings of IEEE Sensors, 2004.

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A classic polysilicon gauge design is schematized in figure 1. The global resistance may be divided in three parts: the metal lines (few dozens ohms), the contacts (few ohms) and the polysilicon pattern (around 1 k ). If we report these values to the stability specifications shown above it is obvious that metal and contacts are important terms that cannot be neglected. For example, a resistivity change of only 7 10 -3 for a 30 metal line causes 1 10-4 relative variation on a 1.6 k gauge. The main objective of the present work was to extend the reliability study from the polysilicon gauge resistivity measurement to a more general approach that takes into account these parameters. Therefore, three types of different electrical test structures have been designed for the independent measurements of polysilicon, metal and contact resistances. After presenting the experimental set-up, the emphasis throughout will be on separated thermal aging study of each gauge part. AbstractThis paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150°C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease around 4 10 -3 . On the other hand, polysilicon resistivity variations were not observable except for few samples that showed a relative increase up to 7 10 -3 . Polysilicon contact resistance showed no particular trend with the aging time. The impact of these results on the overall sensor reliability has also been discussed.

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Design of a polysilicon-on-insulator pressure sensor with original polysilicon layout for harsh environment

Malhaire

Barbier

2003

Thin Solid Films

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Influence of chemical corrosion on resistivity and 1/f noise of polysilicon gauges

Cited by 4 publications

References 4 publications

Fracture strength of micro- and nano-scale silicon components

Fracture strength of micro- and nano-scale silicon components

Reliability study of AlTi / TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications

Design of a polysilicon-on-insulator pressure sensor with original polysilicon layout for harsh environment

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