Influence of charge carrier density in silicon on spectrum band structure of photonic crystal

Chernyshov, Borys

doi:10.1109/ysf.2015.7333188

Cited by 3 publications

(2 citation statements)

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“…To be able to use semiconductors in the microwave range, these losses need to be reduced significantly. There are different ways to address this problem: by, for example, using donor or acceptor dopes [6], low temperatures [7]. A possible way to reduce the effect of losses in semiconductor is to structure the surface by perforating holes in a semiconductor slab.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of One-Dimension Photonic Crystal Spectrum via Perforated Silicon Slab

Chernyshov¹,

Tarapov²

2016

PIER Letters

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This paper describes the study of zone-spectra of one-dimension finite-element photonic crystal quartz/silicon in the millimetre waveband. The silicon elements of photonic crystal are performed as slabs with holes. The numerical and experimental investigations have demonstrated the possibility of using the effective medium approach for the silicon element of photonic crystal. The paper introduces a simple phenomenological formula for the calculation of effective permittivity of perforated silicon slab.

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Section: Introductionmentioning

confidence: 99%

Manipulation of One-Dimension Photonic Crystal Spectrum via Perforated Silicon Slab

Chernyshov¹,

Tarapov²

2016

PIER Letters

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“…These values of permittivity are achieved at high doping levels. However, it is impossible to use semiconductors with high doping levels in the millimeter wavelength range because of high losses in them [10]. For the defect mode formation it is preferable to use the high-ohmic semiconductors as defect layers.…”

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confidence: 99%

Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode

Chernyshov¹,

Golovaschenko²,

Деркач³

et al. 2017

RADIOFIZ. ELEKTRON.

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The purpose of this paper is an experimental investigation of the influence of properties of the silicon defect layer in a dielectric photonic crystal on the transmission peak spectral properties. The influence of the defect layer thickness on the defect mode frequency is shown. The possibility of changing characteristics of transmission peak by green laser illumination of the silicon layer is demonstrated and analyzed using a photonic crystal approach. It is experimentally found that illumination leads to a decrease of transmission coefficient value at the defect mode frequency, but does not lead to a change of this peak frequency. The non-equilibrium carriers concentration and their lifetime have been evaluated. The results of this paper can be used in manufacturing controllable circuits in millimeter waveband and the approach can be used in semiconductors manufacture as non-destructive control of semiconductors properties method. Fig. 6. Bibl.: 17 titles.

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Impact of major carrier concentration in silicon on transparence of photonic crystal

Chernyshov

Tarapov

2016

2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW)

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Influence of charge carrier density in silicon on spectrum band structure of photonic crystal

Cited by 3 publications

References 1 publication

Manipulation of One-Dimension Photonic Crystal Spectrum via Perforated Silicon Slab

Manipulation of One-Dimension Photonic Crystal Spectrum via Perforated Silicon Slab

Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode

Impact of major carrier concentration in silicon on transparence of photonic crystal

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