Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor Performance

McDowell, Matthew; Hill, Ian G.

doi:10.1109/ted.2008.2011679

Cited by 25 publications

(8 citation statements)

References 21 publications

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“…Naturally, all the compositional effects also depend on the remaining processing parameters and so the specific results presented here for a particular composition should not be taken as an entirely strict rule: in fact, a large number of reports regarding stable TFTs with close to 0 V ON exist in the literature, for compositions around 2:2:2 and 2:2:1 72, 284, 285. Nevertheless, the overall trends verified here for IZO286–288 and GIZO58, 60, 289–291 devices were also verified by other authors.…”

Section: Recent Progress Of N‐type Oxide Tftssupporting

confidence: 73%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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Section: Recent Progress Of N‐type Oxide Tftssupporting

confidence: 73%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…7 Presently In 2 O 3 and ZnO based TCOs such as indium zinc oxide (IZO), indiumgallium oxide (IGO) and indium-gallium-zinc oxide (IGZO) materials have been used as channel layer for thin lm transistor (TFT) fabrications. 8 There are many techniques available for preparation of In 2 O 3 , ZnO, IZO, IGO, IGZO and zinc tin oxide (ZTO) thin lms for transparent active-channel materials in TTFTs [9][10][11][12][13][14][15][16] and solar cells. [17][18][19] So far there is no report on preparation and characterization of hybrid thin lm based on IZO or InZnO.…”

Section: Introductionmentioning

confidence: 99%

Novel hybrid PVA–InZnO transparent thin films and sandwich capacitor structure by dip coating method: preparation and characterizations

Sathish¹,

Bellan

Manandhar

et al. 2015

RSC Adv.

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“…Hopefully, a large range of elements in the periodic table exhibit the (n−1)d 10 s 0 electronic configuration required to obtain an amorphous semiconductor according to this model, including zinc, indium and gallium. For IZO films with 50/50 In/Zn cation % the processing conditions start to be important in order to define the structure of the thin films and polycrystalline or amorphous structures are observed by different authors [53][54][55]. For IZO films with 50/50 In/Zn cation % the processing conditions start to be important in order to define the structure of the thin films and polycrystalline or amorphous structures are observed by different authors [53][54][55].…”

Section: Ternary and Quaternary Compounds: The Examples Of Indium-zinmentioning

confidence: 99%

“…These constitute the most widely explored cations for amorphous multicomponent oxide semiconductor fabrication, in the form of indium-zinc oxide (IZO) and gallium-indium-zinc oxide (GIZO, Figure 2 [53]. Depending on the composition and annealing atmosphere, IZO films are reported to be amorphous up to 600°C [55]. Depending on the composition and annealing atmosphere, IZO films are reported to be amorphous up to 600°C [55].…”

Section: Ternary and Quaternary Compounds: The Examples Of Indium-zinmentioning

confidence: 99%