Influence of Ce0.8R0.2O2–a (R = Y, Sm, Tb) submicron barrier layers at the La2NiO4+δ/YSZ boundary on the electrochemical performance of a cathode

Performance Enhancement of Ce0.8Sm0.2O1.9-Supported SOFC by Electrophoretic Formation of Modifying BaCe0.8Sm0.2O3 and Ce0.8Sm0.1Pr0.1O1.9 Layers

“…Therefore, the development of electrodes that are highly active in the IT range and compatible with CeO 2 and BaCeO 3 electrolytes is of great importance [ 30 , 31 , 32 ]. The rate of oxygen reduction reaction (ORR) at the cathode can be increased using cathode sublayers possessing higher ionic conductivity compared to the parent electrolyte, for example, doped Bi 2 O 3 electrolytes [ 33 , 34 ] or those with mixed oxygen ion and p -type electron conductivity [ 35 , 36 , 37 , 38 ]. For example, mixed valence Pr 3+/4+ used as a co-dopant was found to induce partial electronic conductivity in Gd-doped CeO 2 in an air atmosphere, increasing the grain boundary conductivity by about two orders compared to the base solid solution [ 39 , 40 ].…”

Electrophoretic Deposition and Characterization of the Doped BaCeO3 Barrier Layers on a Supporting Ce0.8Sm0.2O1.9 Solid-State Electrolyte

“…Various methods are used for the deposition of barrier layers in SOFC technology [21,22]: ceramic methods, such as screen-printing [23] and tape calendering [24,25]; vacuum deposition technologies, e.g., magnetron sputtering [26,27], pulsed laser deposition [10,28], and physical vapor deposition (PVD) [29]; aerosol-spraying methods under atmospheric [30] and reduced pressures [31]; and colloidal and solution technologieselectrophoretic deposition [32,33], dip-coating and sol-gel [34,35], suspension centrifugation [36] etc. One of the flexible, easy-to-implement, and cheap technologies is electrophoretic deposition (EPD), which does not require high-tech equipment and allows the deposition of coatings at room temperature in ambient air with a sufficiently high deposition rate of ~1-10 µm per 1 min [37].…”