Influence of Bi and Mn on the green luminescence of ZnO ceramics

Garcı́a, J.A.; Remón, A.; Piqueras, J.

doi:10.1063/1.339347

Cited by 33 publications

(12 citation statements)

References 4 publications

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“…Intense emission bands at 2.0 eV (620 nm) and 1.69 eV (730 nm) were also observed in electroluminescence spectra of ZnO:Mn ceramics [26]. Narrow green PL bands at 2.36 eV (526 nm) and 2.34 eV (530 nm) with specific PLE spectra were revealed in ZnO:Mn nanopowders [8] and ceramics [1], accordingly. The band at 2.34 eV appeared only after additional annealing at 900 °C of sintered at 1200 °C ceramics, which was ascribed to changes in the intrinsic defect concentration [1].…”

Section: Resultsmentioning

confidence: 81%

“…Narrow green PL bands at 2.36 eV (526 nm) and 2.34 eV (530 nm) with specific PLE spectra were revealed in ZnO:Mn nanopowders [8] and ceramics [1], accordingly. The band at 2.34 eV appeared only after additional annealing at 900 °C of sintered at 1200 °C ceramics, which was ascribed to changes in the intrinsic defect concentration [1]. The aforementioned PL band at 1.92 eV (645 nm) in our ZnO:Mn ceramics should be also believed to be caused by Mn-related centers.…”

Section: Resultsmentioning

confidence: 99%

“…It should be noted that quenching the visible emission as well as its red-shift as a result of Mn doping were earlier observed in ZnO ceramics, films and nanostructures [1][2][3][4][5][6] and were often ascribed to redistribution of green and orange PL bands intensities due to suppression of self-activated green emission [2][3][4][5][6]. This suppression was accounted for by the decrease of concentrations of zinc interstitials Zn i and/or oxygen vacancies V O as a result of Mn incorporation [2][3][4][5]13].…”

Section: Resultsmentioning

confidence: 99%

“…This effect was accounted for by different sites of Mn ions in the host lattice [8] as well as their interaction with Zn i [2,5,13] and V O [1][2][3][4][5]. The possibility of Mn cluster formation also should be taken into account [6,27].…”

Section: Resultsmentioning

confidence: 99%

“…The latter can be accounted for by the fact that ZnO:Mn, contrary to some other II-VI compounds (ZnS:Mn, ZnSe:Mn, CdS:Mn), exhibits quite weak emission. It has been shown that doping ZnO with Mn results in suppression of self-activated luminescence [1][2][3][4][5][6]. This effect, however, was not investigated in detail, and its mechanism was not decisively established.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Mn doping on ZnO defect-related emission

Stara¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Defect related emission in undoped and doped with manganese ZnO ceramics was investigated. Mn concentration N Mn was varied from 10 19 to 10 21 cm -3.The samples were sintered for 3 hours in air at 1100 °C. The color of ZnO:Mn ceramics changed from yellow to reddish-brown with increasing the Mn content. Photoluminescence (PL) spectra of prepared samples were measured at room temperature and analyzed by Gaussian fitting. PL of undoped ceramics exhibited itself as intense broad band peaking at about 550 nm. Two effects were shown to occur as a result of Mn doping: i) drastic quenching of self-activated PL accompanied by gradual red-shift of spectral boundary of the quenching with increasing the Mn content; ii) appearance of a new emission band peaking at 645 nm that becomes dominant in the PL spectrum at N Mn = 10 20 cm -3 . The observed effects were believed to be due to re-absorption of self-activated ZnO emission by Mn-related centers. The following recombination in excited centers was supposed to occur by both radiative and nonradiative ways, the former being responsible for 645 nm PL band.

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Section: Resultsmentioning

confidence: 81%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of Mn doping on ZnO defect-related emission

Stara¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Preparation of undoped and indium doped ZnO thin films by pulsed laser deposition method

Kotlyarchuk

Savchuk²,

Oszwałdowski

2005

Cryst. Res. Technol.

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An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO thin films is also analysed.

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