Influence of Mn doping on ZnO defect-related emission

Abstract

Abstract. Defect related emission in undoped and doped with manganese ZnO ceramics was investigated. Mn concentration N Mn was varied from 10 19 to 10 21 cm -3.The samples were sintered for 3 hours in air at 1100 °C. The color of ZnO:Mn ceramics changed from yellow to reddish-brown with increasing the Mn content. Photoluminescence (PL) spectra of prepared samples were measured at room temperature and analyzed by Gaussian fitting. PL of undoped ceramics exhibited itself as intense broad band peaking at about 550 nm. Two effects were shown to occur as a result of Mn doping: i) drastic quenching of self-activated PL accompanied by gradual red-shift of spectral boundary of the quenching with increasing the Mn content; ii) appearance of a new emission band peaking at 645 nm that becomes dominant in the PL spectrum at N Mn = 10 20 cm -3 . The observed effects were believed to be due to re-absorption of self-activated ZnO emission by Mn-related centers. The following recombination in excited centers was supposed to occur by both radiative and nonradiative ways, the former being responsible for 645 nm PL band.

Correlation between Photoluminescent and Photoelectrical Properties of Mn-Doped ZnO

“…In this case, the subsequent capture of an excited electron by a Mn Zn ion occurs in the attractive field of the positive charge and is assumed to be fast and non-radiative [14]. On the other hand, the PL band at about 650 nm observed in [8,9,15] and the present work can be attributed to radiative electron transitions in Mn-related centers. Thus, the existence of two ways of the photoelectron capture by Mn…”

“…The analysis of the emission spectra of the same ZnO : Mn ceramics by means of the Gaussian deconvolution showed [15] that, side-by-side with the quenching of the self-activated emission, a new PL band peaked at 645 nm appeared. This band enhanced gradually with respect to other ones with increasing the Mn content and became dominant in the PL spectrum at Mn = 10 20 cm −3 [15]. An enhancement of the 645-nm emission accompanied by the suppression of other PL bands gives possibility to attribute this emission to radiative electron transitions in Mn-related centers a b [15].…”

Improving optical and morphological properties of Mn-doped ZnO via Ar ion sputtering followed by high-temperature UHV annealing

“…In this study, photoluminescence (PL) spectroscopy is utilized to investigate the impact of Mn incorporation and UHV treatment on the presence of defects. These defects subsequently alter the band gap and luminescence characteristics of zinc oxide [10,19,63].…”

“…Numerous researchers have dedicated their efforts to exploring the effect of doping on ZnO, aiming to enhance its optical, electrical, and magnetic characteristics. Incorporating minute quantities of dopant metal oxide materials, such as Mn 2+ , Mg 2+ , Sb 3+ , In 3+ , Cu 2+ , Co 3+ , Al 3+ , and others [10][11][12][13][14][15][16][17][18], represents * E-mail: z.hachemi@univ-dbkm.dz the primary approach to synthesizing ZnO alloys with widened band gaps in various nanostructures, including nanofibers, nanocônes, nanowires, and more [19][20][21].…”

“…At low concentrations (1%-5%), this substitution process provides favorable properties such as homogenous grain shape, solid texture, and improved crystallinity [6,[26][27][28]. Consequently, ZnMnO thin films prove to be an ideal material for short-wavelength magneto-optical applications.Currently, a variety of techniques are employed for the synthesis of ZnO nanomaterials, including hydrothermal methods [29][30][31], solution processing [32], pulsed laser deposition [33], and pyrolysis sputtering [10,13,34]. Among these approaches, pyrolysis is favored in this study because of its convenience of use, nonvacuum, good homogeneity, and cost-effectiveness.…”