Influence of B2O3–SiO2–ZnO–BaO glass ratio and sintering temperature on the microstructure and property of copper thick film for low temperature co-fired ceramic

Chen, Jun; Yang, De’an; Zhai, T.; Gui, Bingqiang; Wang, Qi

doi:10.1007/s10854-015-3975-2

Cited by 8 publications

(3 citation statements)

References 17 publications

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“…Coatings 2024, 14, x FOR PEER REVIEW 12 of 1 of the aluminum pastes prepared from G3 glass is greater than that of the aluminum pastes prepared from G1 glass at 600 °C and 620 °C because G3 glass has better wettin properties of aluminum and forms a thicker transition layer than that of the aluminum pastes prepared from G1 glass at 600 °C and 620 °C. When the temperature is raised t 640 °C and 660 °C, the wetting property of aluminum by G1 glass also reaches a certai level and the growth of the Zinc oxide matrix in G1 glass is the best, so the adhesion o the aluminum pastes prepared by G1 glass at 640 °C and 660 °C is greater than that of th aluminum pastes prepared by G3 glass [22].…”

Section: Influence Of Glass Powder Wetting Property On Adhesionmentioning

confidence: 99%

Interaction of Glass Powder with Al Powder and Zinc Oxide in Aluminum Paste

Hou,

Liu,

Zhu

2024

Coatings

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By analyzing the interaction of different glass powders with Al powder and Zinc oxide, the effect of the wetting property of glass powders on the surface morphology of aluminum paste and the adhesion between aluminum paste and Zinc oxide substrate is discussed. The effect of wetting property for different glass powders on Al and Zinc oxide is analyzed by a high-temperature contact angle tester, and the contact angle-temperature and extension radius-temperature curves are determined during the wetting process of the glass powders. The microstructure of the cross-section of the glass powders and of the substrate, and the surface morphology of the aluminum pastes are analyzed by a scanning electron microscope. Adhesion between the aluminum paste and the Zinc oxide substrate is analyzed by a vertical tensile strength meter. The results show that the wetting property of glass powder is an important factor affecting the adhesion and surface morphology of the paste, and it plays a role in preventing excessive oxidation of aluminum paste during sintering at high temperatures.

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Section: Influence Of Glass Powder Wetting Property On Adhesionmentioning

confidence: 99%

Interaction of Glass Powder with Al Powder and Zinc Oxide in Aluminum Paste

Hou,

Liu,

Zhu

2024

Coatings

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“…The adhesion between the Cu thick film and the ceramic layers, such as AlN, Al 2 O 3 , and BaTiO 3 , is very crucial. Glass frits added in the Cu paste can effectively enhance the adhesion between the Cu thick film and the ceramic layers 12‐13 …”

Section: Introductionmentioning

confidence: 99%

“…Glass frits added in the Cu paste can effectively enhance the adhesion between the Cu thick film and the ceramic layers. [12][13] B 2 O 3 -based glass phases are the common binary glass frits used for the sintering process of the Cu thick films. The additional SiO 2 and ZnO glass powder added in the Cu sintering paste is the effective way to reduce the sintering temperature instead of decreasing the sintering Cu particle size.…”

Section: Introductionmentioning

confidence: 99%

Effect of mixing glass frits on electrical property and microstructure of sintered Cu conductive thick film

Wang

Lin

et al. 2020

J Am Ceram Soc

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The resistivity of the sintered Cu thick film decreases with the weight percentage of the SiO2–ZnO–B2O3 additive in the mixing glass frits up to 50 wt%. As the weight percentage of the SiO2–ZnO–B2O3 additive in the mixing glass frits is over 50 wt%, the resistivity of the sintered Cu thick films is quite similar. The lowest resistivity (6.62 × 10−6 Ω‐cm) of the sintered Cu thick films occurs at 75 wt% of the SiO2–ZnO–B2O3 additive. Also, we observe the extensive glass phase framing around the large Cu grains in the Cu thick films sintered with low SiO2–ZnO–B2O3 additives (less than 50 wt%) narrows the cross‐section area of the electrical path. On the contrary, the round‐shaped glass phase solidified among the small Cu grains allows a larger cross‐section of the electrical path (a possible lower resistivity) for the Cu thick films sintered with higher SiO2–ZnO–B2O3 additives (larger than 50 wt%). The above results imply that the resistivity of the sintered Cu thick film correlates well with the microstructure (Cu grain size and the glass/Cu composite structure) of the sintered Cu thick films. Twin grain boundaries can clearly be observed in the sintered Cu thick films, especially for the Cu thick film sintered with the higher SiO2–ZnO–B2O3 additives. Owing to small Cu grains size and high density of Cu grain boundary, the probability of the grain boundaries with a high grain‐boundary energy in the Cu thick film sintered with high SiO2–ZnO–B2O3 additive would be much larger, comparing to that in the Cu thick film sintered with low SiO2–ZnO–B2O3 additive. Thus, more annealing twin boundaries formed in the Cu thick film sintered with high SiO2–ZnO–B2O3 additive. Hence, the formation of the twin boundary in the sintered Cu thick film helps reducing the resistivity of the sintered Cu films.

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