Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

Sugunraj, S.; Aravindan, G.; Srinivasan, M.; Ramasamy, P.

doi:10.1007/s12633-022-02097-5

Cited by 9 publications

(5 citation statements)

References 27 publications

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“…The inside furnace environment is maintained by the argon gas at the flow rate is 20 LPM. [ 2 ] After the complete melting the slit valve is opened for enhancing the growth. The simulation work starts at the growth and the cooling process.…”

Section: Furnace Diagrammentioning

confidence: 99%

“…In order to control the heat extraction in the DS furnaces the geometrical structure of the furnace is modified. [1,2] Nagarajan et al, have investigated the addition of an insulation block in the DS furnace both numerically and experimentally. The results conclude that this modification reduces power consumption and enhances the growth rate.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Sekar,

Thamodharan,

Manikkam

et al. 2023

Cryst. Res. Technol.

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The present work is based on the numerical investigation of thermal stress and the dislocation density of the directional solidification (DS) grown multi‐crystalline silicon (mc‐Si) ingot. The heat exchanger block (HEB) plays the main role in the growth process, which decides the thermal stress and melt‐crystal interface of the mc‐Si ingot. The conventional furnace is modified to increase the quality of the mc‐Si ingot. The modification on the conventional furnace is done in the insulation block replaced by 1/3rd of the HEB. The HEB enhances the huge amount of heat extraction from the bottom of the crucible. The von Mises stress, dislocation density, and thermal gradient are analyzed. The thermal stress is reduced by the low thermal gradient influenced by the modified HEB. The modified HEB reduces the von Mises stress and dislocation density. The modified furnace system overcomes the conventional case ingot. The result shows that the modified furnace grown mc‐Si ingot improves the efficiency of the solar cell.

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Section: Furnace Diagrammentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Sekar,

Thamodharan,

Manikkam

et al. 2023

Cryst. Res. Technol.

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“…Finally, they all are segregated in the crystal through the melt. [21,[45][46][47][48][49][50] Melt-Crucible Interface:…”

Section: Chemical Reactionsmentioning

confidence: 99%

“…An argon gas purge is used to regulate the atmosphere inside the growth chamber at pressures between 20 and 100 m bar. [ 15–23 ]…”

Section: Si Ingot Growth Techniquementioning

confidence: 99%

“…An argon gas purge is used to regulate the atmosphere inside the growth chamber at pressures between 20 and 100 m bar. [15][16][17][18][19][20][21][22][23] A seed crystal with a specified crystallographic orientation is brought into contact with the melt after the feedstock has fully melted. The temperature has been adjusted to nearly the silicon's melting point.…”

Section: Cz Techniquementioning

confidence: 99%

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A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Zhang

et al. 2023

Silicon

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Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidi cation of silicon ingots. The performance of solar cells depends directly on the quality of the wafer and impurities distributions in silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidi cation furnaces are studied. The transient global simulation method is used to calculate the coupled thermal and ow elds in the furnaces, considering the convection of gas and melt, chemical reactions, and segregations of the impurities at the crystal-melt interface. The simulation results show that the distributions of oxygen and carbon impurities change signi cantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.

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Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

Cited by 9 publications

References 27 publications

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

Numerical Investigation of the Effect of Modified Heat Exchanger Block on Thermal Stress and Dislocation Density of DS‐Grown mc‐Si Ingot

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

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