Influence of applied load on vacuum wafer bonding at low temperature

Yu, Wei; Tan, Cher Ming; Wei, Jun; Deng, S. S.; Nai, Mui Ling Sharon

doi:10.1016/j.sna.2004.03.017

Cited by 18 publications

(19 citation statements)

References 13 publications

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“…After the rigorously surface cleaning, the pre-bonding and annealing processes were performed in a vacuum oven pumped to 60 Pa. The vacuum acted as a powerful pump, which could suck the trapped gas and water out of the bonding interface (Yu et al, 2004). While the trapped gas and water molecules were extracted out by vacuumizing, the plates were prebonded together by Van der Waals attraction.…”

Section: Low Temperature Bondingmentioning

confidence: 99%

A low temperature bonding of quartz microfluidic chip for serum lipoproteins analysis

Zhuang

Jin

Liu

et al. 2006

Biomed Microdevices

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A low-temperature bonding method for microfabrication of quartz microfluidic chips has been developed. The bonding process involved two steps: pre-bonding and post-annealing at low temperature. The bonding quality was evaluated by measuring the shear force at bonding interface and the electrical properties of the chips. Shear force of 5.66 MPa (566 N/cm(2)) was obtained in a bonded chip after a post-annealing at 200 degrees C for 6 h. We owe the strong bonding strength to the formation of Si-O-Si bonds at the bonding interface during the post-annealing stage. The bonding procedures were not sensitive to surrounding and could be performed in a routine laboratory without clean room conditions. The performance of the fabricated microfluidic chips was tested by capillary zone electrophoresis (CZE) of serum lipoproteins with laser-induced fluorescence (LIF). The low-density (LDL) and high-density (HDL) lipoproteins in the serum was separated completely by using tricine buffer with methylglucamine.

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Section: Low Temperature Bondingmentioning

confidence: 99%

A low temperature bonding of quartz microfluidic chip for serum lipoproteins analysis

Zhuang

Jin

Liu

et al. 2006

Biomed Microdevices

View full text Add to dashboard Cite

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“…The silicon wafers with thermal oxide of 500-600 nm thickness are also of (100) orientation. The bonding procedures were described elsewhere [5], [6]. Only Si-SiO wafer bonding was performed in present work for the fabrication of SOI structure.…”

Section: Methodsmentioning

confidence: 99%

“…There are several vacuum wafer bonding methods published, such as wafer bonding in ultrahigh vacuum (UHV) 10 mbar [3], wafer bonding after Ar beam surface activation in high vacuum 10 mbar [4], wafer bonding at medium vacuum level 10 mbar [5], [6], and wafer bonding at low vacuum level (several mbar) [7].…”

Section: Introductionmentioning

confidence: 99%

“…Although the high bond strength can be achieved with this type of bonding [5], [6], the bonding mechanisms have not been explored. It is found that the mechanisms are different from that of the traditional direct wafer bonding as well as the UHV bonding methods.…”

Section: Introductionmentioning

confidence: 99%

“…However, in UHV wafer bonding, two atomically clean surfaces produced in UHV make covalent bonding easier, thus attaining high bond strength [3]. As for the medium vacuum level wafer bonding, its mechanisms are rarely discussed even qualitatively [5], [6]. To our knowledge, no mathematical model has been established for the medium vacuum level wafer bonding.…”

Section: Introductionmentioning

confidence: 99%

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Mathematical model of low-temperature wafer bonding under medium vacuum and its application

Wei

Tan

et al. 2005

IEEE Trans. Adv. Packag.

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Low-temperature direct wafer bonding was successfully performed under medium vacuum level. A mathematical model was developed based on the qualitative understanding of the bonding mechanisms. The model combined the diffusion-reaction model of water in SiO 2 and the diffusion theory in porous media. It is found that the model agrees well with the experimental data. This model can be applied to predict the effects of annealing time, annealing temperature, ambient vacuum, wafer orientation, and wafer dimension on the bond strength. Index Terms-Bond strength, bonding mechanisms, diffusion theory, mathematical model, wafer bonding.

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Effects of static load and residual stress on fused silica direct bonding interface properties

et al. 2021

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Defect free direct bonding of rigid and large area glass samples, such as prisms, becomes increasingly important for the manufacturing of modern optical and optomechanical components. Typically, in order to apply a static load during the annealing step, specialized heat-resistant pressure mountings are required. This makes manufacturing effortful and cost-intensive. In this paper, we present plasma activated bonding experiments conducted on fused silica plates where residual stress has been introduced prior to the contacting step and where annealing is performed with and without a static load. We find that in case of a sufficiently smooth surface, bonding strength is insensitive towards residual stress or static load, or more precisely, towards the interface stress. Furthermore, the residual Fresnel reflection losses of the realized bonding interface were optically measured and they amount to only $$10^{-6}$$ 10 - 6 . We propose that a consideration of the change in Gibbs free energy, dG, allows qualitatively predicting the resulting bonding strength and its spatial distribution, where dG is determined by surface energy and interface stress. At the end of this article, conceivable applications are discussed.

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Influence of applied load on vacuum wafer bonding at low temperature

Cited by 18 publications

References 13 publications

A low temperature bonding of quartz microfluidic chip for serum lipoproteins analysis

A low temperature bonding of quartz microfluidic chip for serum lipoproteins analysis

Mathematical model of low-temperature wafer bonding under medium vacuum and its application

Effects of static load and residual stress on fused silica direct bonding interface properties

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