Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

Lin, Qijing; Zhang, Fuzheng; Zhao, Na; Yang, Ping

doi:10.3390/mi13020296

Cited by 11 publications

(8 citation statements)

References 31 publications

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“…Assuming that the two film types have same densification, then the 10-layered films with higher thickness must have higher conductivity that their 5-layered counterparts. Similar observations were reported for other types of thin film systems [33].…”

Section: Electrical Propertiessupporting

confidence: 90%

Multi-Layered Sol–Gel Spin-Coated CuO Nanofilm Characteristic Enhancement by Sn Doping Concentration

et al. 2022

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CuO films, with their many features, attract special attention for applications in various optoelectronics. In their pristine form, CuO films suffer from low conductivity, which limits their application. Modification, especially by doping, is thus needed. The effects of tin (Sn) doping on the structure, morphology, and optical and, more importantly, electrical properties of multi-layered copper oxide (CuO) films deposited onto tin-doped indium oxide (ITO)/glass substrates by sol–gel spin coating are examined here. The multi-layered films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), electronic absorption (UV-Visible) spectra, and four probe methods. The results confirmed the substitution of Cu2+ ions by Sn4+ ions in the CuO crystallites without altering their monoclinic structure. The measured crystallite size values decreased with increased doping concentration, indicating increased imperfection. This applies to both 5- and 10-layered CuO films. The doping concentration affected other film characteristics, namely, surface morphology and electrical conductivity, in each layered film. Among various systems, the 10-layered film, with 1.5 at% Sn, exhibited optimal properties in terms of higher uniformity (mean square root surface roughness 41 nm) and higher conductivity (50.3 × 10−3·Ω−1·cm−1).

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Section: Electrical Propertiessupporting

confidence: 90%

Multi-Layered Sol–Gel Spin-Coated CuO Nanofilm Characteristic Enhancement by Sn Doping Concentration

et al. 2022

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“…All ZnO peaks seemed to increase when the annealing time increased. This condition paralleled to Q. Lin et al, who reported that annealing at higher temperatures can significantly improve the crystal quality of ZnO nanoparticles [21]. The intensity of the peak at 34.28 • was performed as 54.81, 69.85, 100.00, and 78.73% for n-TiO 2 /ZnO bilayer thin film annealed for 1, 1.5, 2, and 2.5 h, respectively.…”

Section: Structural Propertiessupporting

confidence: 55%

Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

et al. 2023

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Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin coating technique in an effort to diminish the electron-hole recombination rate from single-layered thin film. Annealing time is one of the important parameters in the fabrication process and was varied to study the impact of annealing treatment towards the thin film characteristics as window layer. It was found that the optimum parameter for the n-TiO2/ZnO bilayer was 500 °C with an annealing time of 2 h. High crystallinity of the n-(101)-TiO2/(002)-ZnO bilayer thin film was obtained, which consists of anatase and a hexagonal wurtzite structure, respectively. Orientation of (002)-ZnO is essential for deposition with the (111) Cu2O-absorbing layer due to a low different lattice mismatch between these two interfaces. The homogenous morphology of n-TiO2/ZnO bilayer was observed with a compact and dense layer. The improvement of transmittance has also been achieved in a range of 60%–80%, which indicated that the incident light can penetrate throughout the thin film directly. In addition, a p-Cu2O absorbing layer was successfully fabricated on top of n-TiO2/ZnO bilayer thin film to form a p-n junction in order to visualize significant electrical rectification properties. The existence of p-Cu2O was confirmed by a (111)-peak orientation and triangular shape in structural and morphological properties, respectively.

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“…During the last decades, transparent conducting oxides (TCOs) have been considered attractive materials in different areas due to their high electrical conductivity and large transparency in the visible and near-infrared regions of the electromagnetic spectrum [1][2][3][4]. TCOs are used in a wide variety of devices, e.g., in solar cells, light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), liquid crystal displays, touch screens, photothermal conversion systems, and intelligent windows [5][6][7][8][9][10][11]. The sheet resistance required for a thin transparent electrode strictly depends on the type of application where it is implemented.…”

Section: Introductionmentioning

confidence: 99%

Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide

Cisneros-Contreras

López-Ganem

Sánchez‐Dena

et al. 2023

Physics

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In this study, a low-sophistication low-cost spray pyrolysis system built by undergraduate students is used to grow aluminum-doped zinc oxide thin films (ZnO:Al). The pyrolysis system was able to grow polycrystalline ZnO:Al with a hexagonal wurtzite structure preferentially oriented on the c-axis, corresponding to a hexagonal wurtzite structure, and exceptional reproducibility. The ZnO:Al films were studied as transparent conductive oxides (TCOs). Our best ZnO:Al TCO are found to exhibit an 80% average transmittance in the visible range of the electromagnetic spectrum, a sheet resistance of 32 Ω/□, and an optical bandgap of 3.38 eV. After an extensive optical and nanostructural characterization, we determined that the TCOs used are only 4% less efficient than the best ZnO:Al TCOs reported in the literature. This latter, without neglecting that literature-ZnO:Al TCOs, have been grown by sophisticated deposition techniques such as magnetron sputtering. Consequently, we estimate that our ZnO:Al TCOs can be considered an authentic alternative to high-performance aluminum-doped zinc oxide or indium tin oxide TCOs grown through more sophisticated equipment.

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Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

Cited by 11 publications

References 31 publications

Multi-Layered Sol–Gel Spin-Coated CuO Nanofilm Characteristic Enhancement by Sn Doping Concentration

Multi-Layered Sol–Gel Spin-Coated CuO Nanofilm Characteristic Enhancement by Sn Doping Concentration

Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide

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