Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

Influence of annealing temperature on photoluminescence properties and optical constants of N-doped ZnO thin films grown on muscovite mica substrates

“…Accordingly, the effects of these parameters on the characteristics of the films have been extensively studied. The annealing temperature significantly affects the crystalline properties of the films, such as crystallite size, stress, and defect density [12], which have a major effect on the optical and electrical properties of the films. There have been many reports of sol-gelderived NZO thin films grown on rigid substrates including quartz [7], glass [13,14], silicon [15] etc, but very few prior studies involved flexible substrates are still insignificant.…”

Depositions and characterization of sol–gel processed Al-doped ZnO (AZO) as transparent conducting oxide (TCO) for solar cell application

“…Thin films of AZO can be prepared by various techniques such as spray pyrolysis [10], chemical vapor deposition (CVD) [11], sputtering [12], laser ablation [13], plasma-enhanced CVD (PECVD) [14], single-source CVD (SSCVD) [15], metal-organic CVD (MOCVD) [16], pulsed 1 3 laser deposition (PLD) [16], molecular beam epitaxy (MBE) [16], thermal oxidation of Zn or ZnS [17,18] and atomic layer deposition (ALD) [19]. Yang et al [20] reported highquality transparent and conducting room-temperature deposition of AZO films by magnetron sputtering and studied the effect of thermal annealing in different atmospheres.…”

Trajectory effect on the properties of large area ZnO thin films deposited by atmospheric pressure plasma jet

“…The residual stress consists of thermal stress and intrinsic stress. The thermal stress ( th ) may be calculated by the following equation: where E f is Young's Modulus of the film (100 GPa [18]), f is Poisson's ratio of the film (0.25 [7]), ˛s is the thermal expansion coefficient of the substrate (8.5 × 10 −6 / • C for glass), ˛f is the thermal expansion coefficient of the film (1 × 10 −5 / • C for ZnO thin films [18]) and T (about 200 • C) is the difference between the deposition temperature and room temperature. In our case, the thermal stress is about −40 MPa, and the temperature variation of spray nozzle is about 30 • C which only causes about −6 MPa variation of stress.…”

“…Several deposition methods, such as sputtering [4], DC arc discharge [5], spray pyrolysis [6] and atomic layer deposition [7] have been used to deposit GZO thin films. Since sputtering and DC arc discharge must be operated in a vacuum chamber, the cost of deposition is more expensive.…”