Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles

Walther, S.; Schäfer, Stefan; Jank, Michael P. M.; Thiem, Heiko; Frey, L.; Ryssel, H.

doi:10.1016/j.mee.2010.03.009

Cited by 22 publications

(11 citation statements)

References 17 publications

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“…C is the capacity of the gate insulator, V DS the drain-source voltage and V T the threshold voltage. The carrier mobility is 5•10 -3 cm 2 (Vs) -1 andthe I on /I off ratio is in the range of 5•10 3 to 1.0•10 5 whichis in good agreement with the values of Walther et al [19] with the same ZnO material and evaporated aluminum contacts. In conclusion, the printed ITO electrodes are fully functional and can replace evaporated aluminum contacts in FETs leading to the same electrical performance of the electron device.…”

Section: Assembly Of a Fetsupporting

confidence: 89%

“…The active layer was built with a dispersion of 10 wt.% ZnO nano-particles in ethanol stabilized by TODA (VP ZnO 20, Evonik Industries AG, Germany). The dispersion was spun on the substrate and afterwards annealed at 400 °C under ambient atmosphere for 30 min in order to remove the TODA [19]. The source/drain electrodes were printed with the ITO-ink 2_6.9 on the ZnO layer in ambient conditions.…”

Section: Assembly Of Fetsmentioning

confidence: 99%

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Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices

et al. 2012

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This manuscript presents the conceptional design of indium tin oxide inkjet inks for the manufacture of electron devices. For this purpose, the process window of the printer used is identified and the inks are conceived to meet the requirements. The nano-particles are effectively stabilized in different dispersion media. The rheological, the wetting and the drying behavior of the inks are adapted to the inkjet process and the substrates to be coated. To assemble a field effect transistor (FET), the most suitable ink is chosen and source and drain contacts are printed. In the device, a nano-particulate ZnO layer acts as semiconducting layer and the gate electrode as well as the dielectric layer is formed by a thermally oxidized silicon wafer. The electron device assembled shows the typical FET characteristic proving its functionality

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Section: Assembly Of a Fetsupporting

confidence: 89%

Section: Assembly Of Fetsmentioning

confidence: 99%

Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices

et al. 2012

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“…The preparation of such semiconductor layers is carried out via dip‐10 or spin‐11–16 coating processes involving suspensions of ZnO nanoparticles11–13 or zinc salt solutions 14–16. In all these cases, a post‐treatment at high temperature,17–19 UV irradiation,17, 20 or reduced pressure14 is required. An alternative to the conventional ZnO deposition routes is the mineralization of ZnO from zinc salt solutions directed by bioorganic molecules.…”

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confidence: 99%

Virus‐Templated Synthesis of ZnO Nanostructures and Formation of Field‐Effect Transistors

et al. 2011

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A bioinspired approach to the fabrication of nanostructured functional devices is described. ZnO nanowires are formed by self‐assembly of nanosized ZnO building blocks controlled by tobacco mosaic virus (TMV) templates at nearly ambient conditions. This process allows the integration of TMV/ZnO nanostructures into field‐effect transistors (FETs) with prestructured electrodes. The FETs operate as‐deposited, without further treatment.

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“…In these devices conductive ITO films are coated on the desired substrates by vacuum deposition methods [3][4][5]. Recently, alternative methods for ITO layer generation from nanoparticle suspensions have attracted considerable attention as a possible inexpensive alternative route for production of functional electronics [6][7][8][9][10]. If such materials are used for optoelectronic applications or laser processed, knowledge about their optical properties, especially their complex refractive index is needed.…”

Section: Introductionmentioning

confidence: 99%

Determination of the effective refractive index of nanoparticulate ITO layers

Baum¹,

Alexeev²,

Latzel³

et al. 2013

Opt. Express

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Nanoparticles of transparent conducting oxides, such as indium tin oxide, can be used in printing techniques to generate functional layers for various optoelectronic devices. Since these deposition methods do not create fully consolidated films, the optical properties of such layers are expected to be notably different from those of the bulk material and should be characterized on their own. In this work we present a way to measure the effective refractive index of a particulate ITO layer by refraction of light. The obtained data points are used to identify an accurate layer model for spectroscopic ellipsometry. In this way the complex refractive index of the particle layer is determined in a wide spectral range from ultra violet to near infrared.

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Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles

Cited by 22 publications

References 17 publications

Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices

Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices

Virus‐Templated Synthesis of ZnO Nanostructures and Formation of Field‐Effect Transistors

Determination of the effective refractive index of nanoparticulate ITO layers

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