Influence of annealing processing on dissipation electrical energy, volume, and surface energy loss functions of CZO films

Abbasi, Pouria; Dalouji, Vali

doi:10.1007/s12648-020-01840-1

Cited by 8 publications

(2 citation statements)

References 40 publications

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“…e e e = + i 16 ) describing the phase difference between the induced current and the applied field [81,82]. Investigating the effect of gamma irradiation on d tan is critical.…”

Section: Dielectric Characterization Of the As-deposited And Ir Ppymentioning

confidence: 99%

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C₂,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

Elesh

El-Damhogi²,

Mohammed³

2023

Phys. Scr.

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This study fabricates novel tris (2-phenylpyridinato-C2, N] iridium III thin films using an electron beam evaporator and investigates their structure formation, surface morphology, and linear/nonlinear optical properties. The structural features of thin films were examined using Fourier Transform spectroscopy (FTIR), X-ray diffraction (XRD), Scanning Electron Microscope (SEM). The optical characteristics for various doses of gamma radiation (3 kGy, 6 kGy and 9kGy) were investigated using a UV-Vis-NIR spectrophotometer in the wavelength range from 200 nm to 2500 nm. In addition, the values of fundamental energy gap (Efundamental) values showed a reduction from 2.30 to 1.92 eV and urbach energy increasing from 0.23 to 0.30 when the deposited film irradiated for 9 kGy. The third-order nonlinear susceptibility ( ), the nonlinear absorption coefficient ( ) and the nonlinear refractive index ( ) were determined for all gamma doses. Furthermore, The optical electronegativity ( ), the first moment ( ), the second moments of optical spectra ( ), the oscillator strength (f), the dispersion energy ( ), infinite dielectric constant ( ),oscillator energy ( ), the lattice dielectric constant ( ), and to the effective mass for as-deposited film are calculated as : 1.860, 17.29, 300.20, 0.9960 (eV)2, 4.15 eV, 4.52, 1.18 eV, 5.58, and 8.86 x1059 kg−1 m−3 respectively. The high values of ( ) for as-deposited and irradiated are essential for the creation of low power devices for nonlinear optical applications involving ultrafast switches, optical computers, and ultra-pulsed lasers.

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“…e e e = + i 16 ) describing the phase difference between the induced current and the applied field [81,82]. Investigating the effect of gamma irradiation on d tan is critical.…”

Section: Dielectric Characterization Of the As-deposited And Ir Ppymentioning

confidence: 99%

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C₂,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

Elesh

El-Damhogi²,

Mohammed³

2023

Phys. Scr.

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“…25 This led to higher PCEs possibly due to shortening the optical bandgap and increasing electron transport capabilities of ZnO. [26][27][28] The atomic radius of Cu 2+ (0.73 A) is similar to that of Zn 2+ (0.74 A), thus making it easier for Cu 2+ to be incorporated into the crystal lattice by replacing Zn 2+ ions. 29 Cu 2+ may also form oxides on crystal surface which could inhibit the formation of Zn 2+ aggregates that appear due to interactions with acidic dyes.…”

Section: Introductionmentioning

confidence: 99%

The effects of copper doping on morphology and room-temperature photoluminescence of ZnO nanocolumns

et al. 2022

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Structure, linear and nonlinear optical and photocatalytic properties investigation of ZnO nanorods: influence of growth time

Mohamed

Alfatah

Alshammari

2023

J Mater Sci: Mater Electron

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Influence of annealing processing on dissipation electrical energy, volume, and surface energy loss functions of CZO films

Cited by 8 publications

References 40 publications

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C₂,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C₂,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

The effects of copper doping on morphology and room-temperature photoluminescence of ZnO nanocolumns

Structure, linear and nonlinear optical and photocatalytic properties investigation of ZnO nanorods: influence of growth time

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Influence of annealing processing on dissipation electrical energy, volume, and surface energy loss functions of CZO films

Cited by 8 publications

References 40 publications

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C2,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C2,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

The effects of copper doping on morphology and room-temperature photoluminescence of ZnO nanocolumns

Structure, linear and nonlinear optical and photocatalytic properties investigation of ZnO nanorods: influence of growth time

Contact Info

Product

Resources

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Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C₂,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications

Gamma radiation induced variation in structure formation and optical characteristics of evaporated tris [2-phenylpyridinato-C₂,N]iridium(III) films prepared by electron beam evaporator in photovoltaic applications