Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy

Wang, Bin; Zhao, Zhide; Xu, Wei; Sui, Yanping; Yu, Guanghui

doi:10.1016/j.mssp.2014.07.045

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…A mobility improvement from 586 to 1007 cm 2 V −1 s −1 by excluding H 2 from a N 2 +NH 3 mixture suggested that the presence of H 2 was causing detrimental effects to the surface. GaN decomposition, dislocation etching and surface roughening instigated by hydrogen have been well documented [17,[36][37][38]. Hydrogen etch-induced formation of native donor defects such as nitrogen vacancies [39] are a possibility for explaining the ∼6.6×10 12 cm −2 added charge and the loss in mobility of over 40%.…”

Section: Gas Mixture Pretreatments Of Unetched Ganmentioning

confidence: 99%

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Chan

Keller

Tahhan

et al. 2016

Semicond. Sci. Technol.

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This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2 +NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh =574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas.

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Section: Gas Mixture Pretreatments Of Unetched Ganmentioning

confidence: 99%

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Chan

Keller

Tahhan

et al. 2016

Semicond. Sci. Technol.

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“…In addition, producing deep cavities in GaN films also has several promising applications, such as enhancing the quality of the overgrown thick GaN films, inducing the selfseparation of the overgrown thick films, relieving strain in GaN films and improving the light extraction efficiency of GaN. Zhao et al used H 2 etching to produce porous templates and obtained high quality GaN thick films [11,12]. Miao et al reported that a masked GaN film can form voids through thermal etching.…”

Section: Introductionmentioning

confidence: 99%

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

Yeh¹,

Chu²,

Wu³

et al. 2015

Semicond. Sci. Technol.

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In this paper, based on the anisotropic nature of hydrogen (H 2 ) etching on GaN, we describe a new approach to the removal of threading dislocations in GaN layers. The top surfaces of c-plane (Ga-face) and a-plane GaNs are considered stable in H 2 ; therefore, H 2 etches only crystal imperfections such as dislocation and basal plane stacking fault (BSF) sites. We used H 2 to etch undoped c-plane GaN, n-type c-plane GaN, a-plane GaN, and an InGaN/GaN multiple quantum well structure. Several examinations were performed, indicating deep cavities on the c-plane GaN samples after H 2 etching; furthermore, gorge-like grooves were observed on the a-plane GaN samples. The deep cavities on the c-plane GaN were considered the etched dislocation sites, and the gorge-like grooves on the a-plane GaN were considered the etched BSF sites. Photoluminescence measurements were performed and the results indicated that the H 2 -etched samples demonstrate superior optoelectronic properties, probably because of the elimination of dislocations.

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Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM

Yang

Gao

Cao

et al. 2019

Journal of Elec Materi

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Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy

Cited by 3 publications

References 19 publications

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM

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