Influence of annealing atmosphere on the structure, morphology and transmittance of N-incorporated Ga2O3 films

Effect of annealing atmosphere on the structural and optical properties of the Nb‐doped β‐Ga 2 O 3 films

“…where A is a constant, ν is the frequency of the incident photon and h is the Planck's constant. Then the relation curve of (αhν) 2 and hν [21], while the N-incorporated Ga 2 O 3 film increases [20] which is similar to our results. It is speculated the doped substance may have an crucial effect on the bandgap of the Ga 2 O 3 film after annealing, but how the annealing atmosphere influences the film is still unknown, and further researches are required.…”

“…The effect on annealing on the bandgap of Ga 2 O 3 film has been reported by other researchers. The bandgap of the Ga 2 O 3 :Mg film decreases after annealing [21], while the N‐incorporated Ga 2 O 3 film increases [20] which is similar to our results.…”

“…In 2005, Hyoun Woo Kim prepared gallium oxide nanowires and investigated the effect of thermal annealing on the structural and optical properties [19]. In 2013, Sun Rui reported that the annealing atmosphere has an influence on the structure, morphology and transmittance of N‐incorporated Ga 2 O 3 films [20]. In 2016, Ma Jin reported the effect of annealing on the properties of Ga 2 O 3 :Mg films [21].…”

The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films

“…A smooth surface leads to a lower surface area, which results in low surface density states for the ZnGa 2 O 4 film. The RMS surface roughness was found to be relatively larger after annealing under oxygen ambience, which could be due to the large amount of oxygen diffused by the adsorption of oxygen in the ZnGa 2 O 4 film [ 24 ]. The SEM micrographs of the as-deposited ZnGa 2 O 4 film revealed the columnar structure and irregular arrangement of grains with a rough surface, which were found to be dense and smooth after annealing under air and nitrogen ambiences with the presence of some nano-voids.…”

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

“…Furthermore, dangling bonds related to oxygen defects at grain boundaries can be passivated by N 2 annealing by incorporating nitrogen atoms at gallium or oxygen lattice sites [20,21]. Consequently, the diffraction peak intensities of the N 2 -annealed samples are higher than those of the other samples, as nitrogen appears to improve the crystal quality of the Ga 2 O 3 [22,23]. Figure 3a shows the optical transmittance spectra of the samples for wavelengths between 200 and 400 nm.…”