Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Lee, Young Jae; Schweitz, Michael A.; Oh, Jong‐Min; Koo, Sang‐Mo

doi:10.3390/ma13020434

Cited by 15 publications

(3 citation statements)

References 24 publications

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“…In addition to p-n heterojunctions, n-n isotype junctions of Ga 2 O 3 with n-type ZnO [102] and n-type SiC [212][213] have also been studied. The advantage of forming an isotype structure is that it is a majority carrier device which uses difference in electron affinity in the two materials to create a depletion region for the separation of charge carriers.…”

Section: Pds Based On Heterojunctions Formed With Ga 2 Omentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

265

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Section: Pds Based On Heterojunctions Formed With Ga 2 Omentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

265

153

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“…Among these, Ga 2 O 3 has a bandgap (~4.9 eV) that is significantly higher than that of 4H-SiC (~3.3 eV) and GaN (~3.4 eV) [5][6][7]. Owing to its high breakdown electric field (~8 MV cm −1 ), n-type doping capability, availability of high-quality substrates, and high Baliga's figure of merit (~3400), Ga 2 O 3 is attracting extensive attention as a next-generation power semiconductor material [5,6,[8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering

Lee,

Chung

et al. 2023

Micro

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The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity of Ga2O3 is lower than that of other wide-bandgap materials, resulting in the degradation of the electrical performance and reduced reliability of devices. The heterostructure formation on substrates with high thermal conductivity has been noted to facilitate heat dissipation in devices. In this work, Ga2O3 thin films with an Al2O3 interlayer were deposited on SiC substrates by radio frequency sputtering. Post-deposition annealing was performed at 900 °C for 1 h to crystallize the Ga2O3 thin films. The Auger electron spectroscopy depth profiles revealed the interdiffusion of the Ga and Al atoms at the Ga2O3/Al2O3 interface after annealing. The X-ray diffraction (XRD) results displayed improved crystallinity after annealing and adding the Al2O3 interlayer. The crystallite size increased from 5.72 to 8.09 nm as calculated by the Scherrer equation using the full width at half maximum (FWHM). The carrier mobility was enhanced from 5.31 to 28.39 cm2 V−1 s−1 in the annealed Ga2O3 thin films on Al2O3/SiC. The transfer and output characteristics of the Ga2O3/SiC and Ga2O3/Al2O3/SiC back-gate transistors reflect the trend of the XRD and Hall measurement results. Therefore, this work demonstrated that the physical and electrical properties of the Ga2O3/SiC back-gate transistors can be improved by post-deposition annealing and the introduction of an Al2O3 interlayer.

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“…Among the different polytypes of Ga 2 O 3 (α, β, γ, δ, and ε), monoclinic Ga 2 O 3 is the most thermally stable and can be obtained by annealing sputtered films [ 1 , 2 , 3 , 4 ] because metastable Ga 2 O 3 can be subsequently converted into β-Ga 2 O 3 after high-temperature annealing. Gallium oxide (Ga 2 O 3 ) is a wide-bandgap material with an energy gap (Eg) of 4.8–5.1 eV and has drawn considerable attention for use in various applications such as high-powered semiconductor devices, ultra-violet (UV) detectors, and gas and fire sensors [ 5 , 6 , 7 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

et al. 2021

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In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm2V−1s−1). The gate leakage current is as low as 1.0 × 10−11 A at VGS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O3-treated SITs exhibit higher (approximately 1.64 × 102 times) drain current (VDS = 12 V) and on/off ratio (4.32 × 105) than non-treated control devices.

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Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Cited by 15 publications

References 24 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

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