Influence of anisotropy and position-dependent effective mass on electro-optic effect of impurity doped quantum dots in presence of Gaussian white noise

Saha, Surajit; Ganguly, Jayanta; Pal, Suvajit; Ghosh, Manas

doi:10.1016/j.cplett.2016.06.048

Cited by 10 publications

(1 citation statement)

References 48 publications

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“…In both of these works, the PDM is taken into consideration and it has been found that the effect of the dressed PDM on the electronic and optical properties is significant. Furthermore, detailed discussions about the noise effect on the nonlinear optical properties of doped QD system with Gaussian PDM distribution have been performed . Gosh et al pointed out that, the optical responses in doped QD systems with PDM exhibit considerable departure from that of fixed effective mass…”

Section: Introductionmentioning

confidence: 99%

Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Sarı

Kasapoğlu

Şakiroğlu

et al. 2019

Physica Status Solidi (b)

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In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given this feature, it is more meaningful to take into consideration the PDM of the electron in the low dimensional semiconductor heterostructures under the ILF.

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Section: Introductionmentioning

confidence: 99%