2022
DOI: 10.1016/j.physe.2021.114999
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Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study

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Cited by 12 publications
(7 citation statements)
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“…In particular, χ = χ T + χ V , where χ T is the shift of self-energy caused by the phonon mode coupling and χ V is the shift induced by a volume change due to thermal expansion. , The fitted value of χ for the A 1g 1 mode is 0.0082 cm–1K–1. The coefficient χ of GaSe flakes is comparable or lower than those of other reported 2D materials, which are correlated to the vdW interaction between adjacent layers. A stronger vdW interaction between individual layers leads to larger χ in -0.023 cm–1K–1 (BP), SnS, and SnSe . From these results, it is suggested that GaSe owns a week contribution from lattice thermal expansion and a strong anharmonic effect in adjacent layers of the GaSe crystal.…”
Section: Resultsmentioning
confidence: 66%
“…In particular, χ = χ T + χ V , where χ T is the shift of self-energy caused by the phonon mode coupling and χ V is the shift induced by a volume change due to thermal expansion. , The fitted value of χ for the A 1g 1 mode is 0.0082 cm–1K–1. The coefficient χ of GaSe flakes is comparable or lower than those of other reported 2D materials, which are correlated to the vdW interaction between adjacent layers. A stronger vdW interaction between individual layers leads to larger χ in -0.023 cm–1K–1 (BP), SnS, and SnSe . From these results, it is suggested that GaSe owns a week contribution from lattice thermal expansion and a strong anharmonic effect in adjacent layers of the GaSe crystal.…”
Section: Resultsmentioning
confidence: 66%
“…[49] Compared with pure SnSe 2 , the A 1g peak of LBL-SnSe 2 @MXene slightly shifts toward a lower wavenumber, which is probably caused by the anharmonic effect and interfacial strain between SnSe 2 and MXene. [50,51] In addition, the peaks at 413 and 617 cm −1 are assigned to the Ti-C bond of MXene. [52,53] The XPS and Raman results demonstrate the high purity of SnSe 2 and MXene in the LBL-SnSe 2 @MXene.…”
Section: Terminal Group-oriented Self-assembly Strategymentioning
confidence: 99%
“…The power density of laser irradiation did not exceed ≈10 6 W cm −2 to avoid changes in the film structure during the measurements. [51][52][53][54][55][56] Raman mapping was performed on an area of 50 × 50 μm 2 with a lateral resolution of 2 μm. High-quality imaging mapping was provided by a moving stage (Märzhäuser scanning stage with the TANGO controller, Germany) and a confocal microscope (Olympus BX-43, Japan) with a 20× lens.…”
Section: Characterizationmentioning
confidence: 99%